IRF7752TRPBF International Rectifier, IRF7752TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7752TRPBF
• Description: MOSFET N-CH DUAL 30V 4.6A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7752TRPBF

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Vgs(th) (max) @ Id: 2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 36 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 4.6 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Source-Drain Ratings and Characteristics

IRF7752
Electrical Characteristics @ T
‚
Notes:
I
I
V
t
Q
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
SM
S
rr
d(on)
r
d(off)
f
I
DSS
V
fs
SD
(BR)DSS
GS(th)
GSS
iss
oss
rss
rr
g
gs
gd
DS(on)
Repetitive rating; pulse width limited by
Pulse width
(BR)DSS
max. junction temperature.
2
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
300µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
ƒ
When mounted on 1 inch square copper board, t<10 sec
Min. Typ. Max. Units
Min. Typ. Max. Units
0.60 –––
–––
–––
–––
–––
–––
––– 0.030 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
12
–––
–––
–––
––– 0.030
––– 0.036
–––
–––
–––
–––
861
210
–––
––– -200
9.0
7.2
2.5
2.6
9.1
25
23
25
11
25
–––
–––
–––
–––
100
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.3
2.0
0.91
37
20
V/°C
nC
µA
nA
nC
ns
pF
ns
V
V
V
S
A
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
MOSFET symbol
integral reverse
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= 4.6A
= 1.0A
= 25°C, I
= 25°C, I
= 6.0
= 0V, I
= 10V, I
= 4.5V, I
= V
= 10V, I
= 24V, V
= 24V, V
= 24V
= 15V
= 0V
= 25V
= -12V
= 12V
= 4.5V‚
= 10V‚
GS
Conditions
, I
D
S
F
D
D
D
Conditions
= -250µA
D
GS
GS
= 0.91A
= 0.91A, V
= 250µA
= 4.6A
= 4.6A ‚
= 3.9A ‚
‚
= 0V
= 0V, T
D
www.irf.com
= 1mA
J
GS
= 125°C
G
= 0V ‚
D
S