NTGD4161PT1G ON Semiconductor, NTGD4161PT1G Datasheet - Page 2

• Manufacturer Part Number: NTGD4161PT1G
• Description: MOSFET P-CH DUAL 30V 2.3A 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGD4161PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 281pF @ 15V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
V
(T
V
V
(BR)DSS
Symbol
V
Q
J
GS(TH)
R
Q
(BR)DSS
=25°C unless otherwise stated)
C
C
GS(TH)
t
t
I
I
C
G(TOT)
Q
Q
Q
DS(on)
V
g
d(on)
d(off)
DSS
GSS
G(TH)
t
OSS
RSS
RR
t
t
FS
ISS
t
t
GS
GD
SD
RR
a
b
r
f
/T
/T
J
J
V
V
V
http://onsemi.com
V
V
GS
V
V
V
V
I
V
GS
GS
V
V
DS
S
V
DS
I
NTGD4161P
GS
GS
GS
DS
GS
D
GS
GS
DS
= −0.8 A
= 0 V, dI
= −10 V, V
= −4.5 V, V
= −1.0 A, R
= −24 V
= −15 V, f = 1.0 MHz,
= 0 V,
= −5.0 V, I
= 0 V,
Test Condition
= −4.5 V, I
= V
= −10 V, I
= 0 V, I
= 0 V, V
I
I
V
S
D
DS
2
GS
= −0.8 A
= −2.1A
, I
S
/dt = 100 A/ms,
= 0 V
D
D
GS
DS
= −250 mA
D
DD
= −250 mA
D
D
G
= −2.1 A
= ±20 V
T
= −1.6 A
= −2.1 A
T
= −5.0 V,
= 6.0 Ω
T
T
= −15 V,
J
J
J
J
= 125°C
= 125°C
= 25°C
= 25°C
−1.0
Min
−30
−0.79
−0.65
−1.9
−4.7
0.65
0.90
12.5
Typ
105
190
281
2.7
5.6
1.2
7.6
9.2
4.5
8.0
5.7
2.3
22
50
28
3
±100
Max
−1.0
−3.0
−1.2
−10
160
280
7.1
14
23
20
12
mV/°C
mV/°C
Unit
mΩ
mA
nA
pF
nC
nC
ns
ns
V
V
S
V