FDR8308P Fairchild Semiconductor, FDR8308P Datasheet - Page 15
FDR8308P
Manufacturer Part Number
FDR8308P
Description
MOSFET P-CH DUAL 20V 3.2A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR8308P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 3.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 4.5V
Input Capacitance (ciss) @ Vds
1240pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR8308P
FDR8308PTR
FDR8308PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDR8308P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDR8308P*
Manufacturer:
HAMAMATSU
Quantity:
1
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SuperSOT-6/TSOP-6
FDC6401N
FDC6305N
FDC637AN
FDC6303N
FDC6301N
FDC6561AN
FDC633N
FDC645N
FDC655AN
FDC653N
NDC651N
NDC7002N
FDC5612
FDC3512
FDC3601N
FDC3612
FDC2512
FDC2612
FDC6420C
FDC6327C
FDC6320C
FDC6322C
FDC6321C
FDC6432SH
FDC6333C
NDC7001C
NDC7003P
FDC5614P
FDC6506P
FDC658P
FDC654P
NDC652P
FDC6304P
FDC6302P
USB10H
FDC6312P
FDC6310P
SuperSOT-6/TSOP-6 N-Channel
SuperSOT-6/TSOP-6 Complementary N- and P-Channel
SuperSOT-6/TSOP-6 P-Channel
Products
Min. (V)
30 | –30
60 | –60
20 | -20
20 | -20
25 | -25
25 | -25
25 | -25
30 | -12
BV
100
100
150
200
-60
-60
-30
-30
-30
-30
-25
-25
-20
-20
-20
20
20
20
25
25
30
30
30
30
30
30
50
60
80
DSS
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
0.095 | 0.15 0.15 | 0.22
0.095
0.026
0.027
0.035
0.055
0.077
0.125
0.425
0.725
0.105
0.075
10V
0.06
0.09
2 | 5
0.17
0.05
0.11
0.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2
5
0.07 | 0.125
0.09 | 0.105
0.064@6V
0.088@6V
0.135@6V
0.475@6V
0.08 | 0.17
0.55@6V
0.45 | 1.1
4 | 7.5
4.5V
0.024
0.145
0.042
0.035
0.055
0.135
0.075
0.125
0.115
0.125
R
0.07
0.08
0.45
0.03
0.09
0.28
0.18
1.1
10
DS(ON)
4
–
–
–
–
7
–
2-10
Max (Ω) @ V
5@2.7V | 1.5@2.7V
5@2.7V | 13@2.7V
0.095 | 0.19
0.12 | 0.25
0.6@2.7V
1.5@2.7V
13@2.7V
5@2.7V
2.5V
0.095
0.032
0.054
0.125
0.155
0.12
0.19
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
Discrete Power Products –
0.225
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
3.25 | 2.85
0.29 | 0.23
g
1.64 | 1.1
3.3 | 3.7
2.5 | 5.7
4.7 | 4.1
1.1 | 1.6
0.49 | 1
Typ. (nC)
10.5
1.64
0.49
12.5
10.5
0.22
GS
3.3
3.5
2.1
3.7
1.6
2.3
6.2
1.1
4.4
3.7
11
13
12
10
13
14
15
9
1
8
8
8
3
= 5V
0.22 | 0.12
0.22 | 0.46
0.68 | 0.46
0.51 | 0.34
2.7 | 1.9
2.4 | 2.5
3 | 2.2
2.5 | 2
I
D
0.68
0.22
0.51
0.34
0.46
0.12
-1.9
2.7
6.2
2.5
5.2
5.5
6.3
3.2
4.3
2.6
1.4
1.1
1.8
3.6
2.4
2.3
2.2
3
5
3
1
3
4
(A)
MOSFETs
P
D
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.9
1.6
0.9
0.9
0.9
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
0.9
0.9
0.9
1.3
1.6
1.6
1.6
1.6
0.9
0.9
(W)
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