FDR8308P Fairchild Semiconductor, FDR8308P Datasheet - Page 84
FDR8308P
Manufacturer Part Number
FDR8308P
Description
MOSFET P-CH DUAL 20V 3.2A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR8308P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 3.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 4.5V
Input Capacitance (ciss) @ Vds
1240pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR8308P
FDR8308PTR
FDR8308PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDR8308P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDR8308P*
Manufacturer:
HAMAMATSU
Quantity:
1
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Bipolar Power Transistors – Darlington Transistors (Continued)
Products
TIP127
KSB601
BDW24
BDW24A
BDW24B
BDW24C
BDX54
BDX54A
TIP105
BDX54B
TIP106
BDX54C
TIP107
BDX34A
BDX34B
TIP146T
BDX34C
TIP147T
BDW94
BDW94C
TO-220F NPN Configuration
KSD1413
KSD1589
KSD1417
BDW93CF
TO-220F PNP Configuration
FJPF9020
KSB1023
KSB1098
KSB1022
TO-251(IPAK) NPN Configuration
KSD1222
TO-251(IPAK) PNP Configuration
KSB907
I
C
10
10
10
10
10
12
12
12
5
5
6
6
6
6
8
8
8
8
8
8
8
3
5
7
2
3
5
7
3
3
(A)
V
CEO
100
100
100
100
100
100
100
100
100
100
550
100
45
60
80
45
60
60
80
80
60
80
80
45
60
60
60
60
40
40
(V) V
CBO
100
100
100
100
100
100
100
100
150
100
550
100
45
60
80
45
60
60
80
80
60
80
80
45
60
60
60
60
60
60
(V) V
EBO
–
–
–
–
–
–
5
7
5
5
5
5
5
5
5
5
5
5
5
5
5
5
7
5
6
5
7
5
5
5
(V)
P
C
65
30
50
50
50
50
60
60
80
60
80
60
80
70
70
80
70
80
80
80
20
20
30
30
15
20
20
30
15
15
(W)
1000
2000
1000
1000
1000
1000
1000
2000
2000
2000
2000
2000
2000
2000
2000
Min
750
750
750
750
750
750
750
750
750
750
750
750
750
750
400
2-79
Discrete Power Products –
15000
20000
20000
20000
20000
20000
20000
20000
20000
20000
15000
15000
20000
15000
15000
Max
700
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@I
0.5
C
3
2
2
2
2
3
3
3
3
3
3
3
4
3
5
3
5
5
5
1
3
3
5
1
1
3
3
1
1
(A) @V
CE
3
2
3
3
3
3
3
3
4
3
4
3
4
3
3
4
3
4
3
3
2
2
3
–
4
2
2
3
2
2
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.95
0.9
0.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.5
2.5
2.5
2.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
V
CE
(sat)
C
3
3
2
2
2
2
3
3
3
3
3
3
3
4
3
5
3
5
5
5
2
3
3
5
1
2
3
3
2
2
(A) @I
0.012
0.003
0.008
0.008
0.008
0.008
0.012
0.012
0.006
0.012
0.006
0.012
0.006
0.008
0.006
0.006
0.004
0.003
0.006
0.004
0.003
0.006
0.004
0.004
0.01
0.01
0.02
0.02
0.02
0.02
B
(A)
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