IRF7752 International Rectifier, IRF7752 Datasheet - Page 4
![MOSFET 2N-CH 30V 4.6A 8-TSSOP](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7752
Manufacturer Part Number
IRF7752
Description
MOSFET 2N-CH 30V 4.6A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7752.pdf
(7 pages)
Specifications of IRF7752
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 4.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Input Capacitance (ciss) @ Vds
861pF @ 25V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7752TRPBF
Manufacturer:
MAXIM
Quantity:
1 001
Part Number:
IRF7752TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7752
4
1400
1200
1000
100
800
600
400
200
0.1
10
Fig 5. Typical Capacitance Vs.
1
0
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
V
0.4
V
SD
DS
Forward Voltage
T = 150 C
V
C
C
C
J
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
C oss
C rss
C iss
0.6
=
=
=
=
0V,
C
C
C
°
gs
gd
ds
0.8
+ C
+ C
10
f = 1MHz
gd ,
gd
T = 25 C
J
1.0
C
ds
°
V
SHORTED
GS
1.2
= 0 V
1.4
100
1000
100
10
0.1
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
Single Pulse
T
T
C
J
= 25 C °
= 150 C
4.6A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
V
DS
Q , Total Gate Charge (nC)
4
G
°
, Drain-to-Source Voltage (V)
1
8
BY R
V
V
DS
DS
DS(on)
= 24V
= 15V
12
10
www.irf.com
16
10us
100us
1ms
10ms
100
20