SI2303CDS-T1-GE3 Vishay, SI2303CDS-T1-GE3 Datasheet
SI2303CDS-T1-GE3
Specifications of SI2303CDS-T1-GE3
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SI2303CDS-T1-GE3 Summary of contents
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... Halogen-free According to IEC 61249-2- (Typ Available • TrenchFET - 2 • 100 % R - 2.1 • 100 % UIS Tested APPLICATIONS • Load Switch TO-236 (SOT-23 Top View Si2303CDS (N3)* * Marking Code Si2303CDS-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ° ° ° ° 0 ° ...
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... Si2303CDS Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...
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... On-Resistance vs. Drain Current and Gate Voltage 1 Total Gate Charge (nC) g Gate Charge Document Number: 69991 S-83053-Rev. B, 29-Dec- thru Si2303CDS Vishay Siliconix 1.0 0.8 0.6 0 125 ° ° 0 Gate-to-Source Voltage (V) GS Transfer Characteristics 300 240 C 180 iss 120 C 60 oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...
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... Si2303CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.2 2 1.8 1.6 1 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 = 250 µA 75 100 125 150 10 Limited by R DS(on ...
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... T - Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max.) Si2303CDS Vishay Siliconix 125 150 1.0 0.8 0.6 0.4 0.2 0 100 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www ...
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... Si2303CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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