SI2303CDS-T1-GE3 Vishay, SI2303CDS-T1-GE3 Datasheet

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SI2303CDS-T1-GE3

Manufacturer Part Number
SI2303CDS-T1-GE3
Description
MOSFET P-CH 30V 2.7A SOT23-3
Manufacturer
Vishay
Datasheet

Specifications of SI2303CDS-T1-GE3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 1.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Input Capacitance (ciss) @ Vds
155pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.19 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.9 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-2.7A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
330mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2303CDS-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2303CDS-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
31 407
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SI2303CDS-T1-GE3
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ADI
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10
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8 000
Part Number:
SI2303CDS-T1-GE3
Manufacturer:
VISHAY
Quantity:
220
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SI2303CDS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2303CDS-T1-GE3
Quantity:
96 000
Company:
Part Number:
SI2303CDS-T1-GE3
Quantity:
30 000
Company:
Part Number:
SI2303CDS-T1-GE3
Quantity:
30 000
Company:
Part Number:
SI2303CDS-T1-GE3
Quantity:
950
Company:
Part Number:
SI2303CDS-T1-GE3
Quantity:
999
Part Number:
SI2303CDS-T1-GE3/N3
Manufacturer:
STANSON
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 160 °C/W.
Document Number: 69991
S-83053-Rev. B, 29-Dec-08
MOSFET PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 30
(V)
C
= 25 °C.
0.330 at V
0.190 at V
R
DS(on)
GS
GS
J
= - 4.5 V
(Ω)
= - 10 V
= 150 °C)
b, d
Ordering Information: Si2303CDS-T1-E3 (Lead (Pb)-free)
P-Channel 30-V (D-S) MOSFET
I
D
- 2.7
- 2.1
(A)
G
S
Steady State
a
1
2
≤ 5 s
A
Si2303CDS (N3)*
* Marking Code
Q
= 25 °C, unless otherwise noted
(SOT-23)
g
Si2303CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
TO-236
Top View
2 nC
(Typ.)
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
3
Symbol
R
R
thJA
thJF
D
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• 100 % R
• 100 % UIS Tested
• Load Switch
Available
TrenchFET
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
D
g
stg
Tested
®
Typical
Power MOSFET
80
35
- 55 to 150
- 0.83
- 1.9
- 1.5
- 1.75
1.0
0.7
Limit
± 20
- 2.7
- 2.2
1.25
- 30
- 10
2.3
1.5
- 5
Maximum
b, c
b, c
b, c
b, c
b, c
Vishay Siliconix
120
55
Si2303CDS
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI2303CDS-T1-GE3 Summary of contents

Page 1

... Halogen-free According to IEC 61249-2- (Typ Available • TrenchFET - 2 • 100 % R - 2.1 • 100 % UIS Tested APPLICATIONS • Load Switch TO-236 (SOT-23 Top View Si2303CDS (N3)* * Marking Code Si2303CDS-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ° ° ° ° 0 ° ...

Page 2

... Si2303CDS Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...

Page 3

... On-Resistance vs. Drain Current and Gate Voltage 1 Total Gate Charge (nC) g Gate Charge Document Number: 69991 S-83053-Rev. B, 29-Dec- thru Si2303CDS Vishay Siliconix 1.0 0.8 0.6 0 125 ° ° 0 Gate-to-Source Voltage (V) GS Transfer Characteristics 300 240 C 180 iss 120 C 60 oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si2303CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.2 2 1.8 1.6 1 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 = 250 µA 75 100 125 150 10 Limited by R DS(on ...

Page 5

... T - Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max.) Si2303CDS Vishay Siliconix 125 150 1.0 0.8 0.6 0.4 0.2 0 100 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www ...

Page 6

... Si2303CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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