FDC604P Fairchild Semiconductor, FDC604P Datasheet - Page 3
![MOSFET P-CH 20V 5.5A SSOT-6](/photos/5/42/54216/261-supersot-6_sml.jpg)
FDC604P
Manufacturer Part Number
FDC604P
Description
MOSFET P-CH 20V 5.5A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC604P.pdf
(5 pages)
Specifications of FDC604P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
33 mOhm @ 5.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 4.5V
Input Capacitance (ciss) @ Vds
1926pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.033 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
23 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
5.5 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC604PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC604P
Manufacturer:
Fairchild Semiconductor
Quantity:
31 063
Company:
Part Number:
FDC604P
Manufacturer:
FAIRCHILD
Quantity:
438
Part Number:
FDC604P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC604P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDC604P_NL
Manufacturer:
FSC
Quantity:
2 900
Part Number:
FDC604P_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
20
15
10
20
15
10
5
0
5
0
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0
0
Figure 1. On-Region Characteristics.
1
V
-50
V
Figure 5. Transfer Characteristics.
GS
Figure 3. On-Resistance Variation
-2.5V
DS
= -4.5V
= -5V
V
I
GS
D
= -5.5A
-25
= -4.5V
0.5
-V
-V
GS
withTemperature.
T
DS
, GATE TO SOURCE VOLTAGE (V)
1
0
J
-2.0V
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
1
25
-1.8V
50
T
2
1.5
A
= -55
75
-1.5V
o
C
100
125
o
C)
2
o
C
25
3
125
o
C
150
2.5
Figure 6. Body Diode Forward Voltage Variation
0.12
0.09
0.06
0.03
0.0001
0.001
0
0.01
2.5
1.5
0.5
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
1
10
3
2
1
1
0
0
V
Drain Current and Gate Voltage.
V
GS
GS
T
= -1.5V
A
= 0V
= 25
Gate-to-Source Voltage.
0.2
-V
o
C
-V
SD
2
T
GS
, BODY DIODE FORWARD VOLTAGE (V)
A
5
, GATE TO SOURCE VOLTAGE (V)
= 125
T
-I
-1.8V
0.4
A
D
o
, DRAIN CURRENT (A)
= 125
C
25
-2.0V
o
C
o
C
3
10
0.6
-55
-2.5V
o
C
0.8
-4.5V
15
4
FDC604P Rev C(W)
I
1
D
= -2.8 A
1.2
20
5