FDD3672 Fairchild Semiconductor, FDD3672 Datasheet

MOSFET N-CH 100V 44A D-PAK

FDD3672

Manufacturer Part Number
FDD3672
Description
MOSFET N-CH 100V 44A D-PAK
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Type
Power MOSFETr
Datasheet

Specifications of FDD3672

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 44A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1710pF @ 25V
Power - Max
135W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.028Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Drain Current (max)
6.5A
Power Dissipation
135W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
TO-252
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.5 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD3672
FDD3672TR

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Quantity
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©2010 Fairchild Semiconductor Corporation
FDD3672
N-Channel UltraFET
100V, 44A, 28mΩ
Features
• r
• Q
• Low Miller Charge
• Low Qrr Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82760
MOSFET Maximum Ratings
Thermal Characteristics
R
R
R
V
V
I
E
P
T
D
GS
J
DSS
AS
D
θJC
θJA
θJA
Symbol
, T
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
DS(ON)
g
(tot) = 24nC (Typ.), V
STG
= 24mΩ (Typ.), V
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
SOURCE
GS
GS
GATE
amb
C
C
= 10V
= 10V, I
= 25
= 100
o
®
C
= 25
TO-252AA
Trench MOSFET
o
C, V
o
o
C, V
D
C, V
= 44A
GS
GS
GS
= 10V)
Parameter
= 10V)
T
= 10V, R
C
(FLANGE)
= 25°C unless otherwise noted
DRAIN
θJA
certification.
= 52
o
C/W)
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
2
copper pad area
G
D
S
-55 to 175
Ratings
Figure 4
1.11
100
120
135
100
±20
6.5
0.9
44
31
52
March 2010
FDD3672 Rev. A2
Units
W/
o
o
o
C/W
C/W
C/W
mJ
o
W
V
V
A
A
A
A
C
o
C

Related parts for FDD3672

FDD3672 Summary of contents

Page 1

... High Voltage Synchronous Rectifier DRAIN (FLANGE 25°C unless otherwise noted C Parameter 10V 10V 10V C/W) θ copper pad area certification. March 2010 Ratings 100 ± 6.5 Figure 4 120 135 0.9 -55 to 175 1.11 100 52 FDD3672 Rev. A2 Units C/W o C/W o C/W ...

Page 2

... 44A 21A 44A, dI /dt =100A/µ 44A, dI /dt =100A/µ Tape Width Quantity 16mm 2500 units Min Typ Max Units 100 - - µ 250 ±100 - - 0.024 0.028 Ω - 0.031 0.047 0.054 0.068 - 1710 - pF - 247 - 104 104 1. 1 FDD3672 Rev. A2 ...

Page 3

... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability V = 10V 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK θJC θ FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDD3672 Rev. A2 175 ...

Page 4

... V = 10V 44A GS D 0.4 80 120 160 200 - Figure 10. Normalized Gate Threshold Voltage vs = 15V 175 - 4.0 4.5 5.0 5.5 6 GATE TO SOURCE VOLTAGE ( 10V DRAIN CURRENT (A) D Current 250µ - 120 160 JUNCTION TEMPERATURE ( C) J Junction Temperature 6.5 50 200 FDD3672 Rev. A2 ...

Page 5

... THIS AREA IS LIMITED WAVEFORMS IN DESCENDING ORDER 44A 21A D 0 ISS GS GD ≅ OSS RSS 0V 1MHz DRAIN TO SOURCE VOLTAGE (V) DS Voltage 100 us DS(on SINGLE PULSE T = MAX RATED 1.11 C 100 V , DRAIN to SOURCE VOLTAGE (V) DS Figure 14. Forward Bias Safe Operating Area 100 300 FDD3672 Rev. A2 ...

Page 6

... Figure 18. Switching Time Test Circuit ©2010 Fairchild Semiconductor Corporation DUT 0.01Ω Figure 15. Unclamped Energy Waveforms DUT g(TH g(REF) 0 Figure 17. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 19. Switching Time Waveforms BV DSS g(TOT 10V GS Q gs2 OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDD3672 Rev 90% ...

Page 7

... C/W) θJA is never exceeded (EQ 0.01 (0.0645 Figure 20. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 33.32+ 23.84/(0.268+Area) EQ.2 θ 33.32+ 154/(1.73+Area) EQ.3 θJA 0 (0.645) (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDD3672 Rev. A2 ...

Page 8

... PSPICE Electrical Model .SUBCKT FDD3672 rev May 2002 5.8e- 6.8e-10 Cin 6 8 1.6e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 105 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 9.56e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 4.45e-9 RLgate 1 9 95.6 RLdrain RLsource ...

Page 9

... RSLC2 - RDRAIN 6 ESG 8 EVTHRES + LGATE EVTEMP 8 RGATE + MSTRO RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN RSLC1 ISCL DBREAK 50 11 DBODY 16 MWEAK EBREAK MMED + 17 18 LSOURCE - SOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDD3672 Rev ...

Page 10

... RTHERM1 TH 6 5.5e-4 RTHERM2 6 5 5.0e-3 RTHERM3 5 4 4.5e-2 RTHERM4 4 3 10.5e-2 RTHERM5 3 2 3.4e-1 RTHERM6 2 TL 3.5e-1 SABER Thermal Model SABER thermal model FDD3672 template thermal_model th tl thermal_c th cctherm.ctherm1 th 6 =3.2e-3 ctherm.ctherm2 6 5 =3.3e-3 ctherm.ctherm3 5 4 =3.4e-3 ctherm.ctherm4 4 3 =3.5e-3 ctherm ...

Page 11

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ ...

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