FDS2670 Fairchild Semiconductor, FDS2670 Datasheet

MOSFET N-CH 200V 3A SO-8

FDS2670

Manufacturer Part Number
FDS2670
Description
MOSFET N-CH 200V 3A SO-8
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS2670

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
1228pF @ 100V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.13 Ohms
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS2670
FDS2670TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS2670
Quantity:
7 690
Part Number:
FDS2670
Manufacturer:
FSC
Quantity:
144
Part Number:
FDS2670
Manufacturer:
FIARCHILD
Quantity:
20 000
Company:
Part Number:
FDS2670
Quantity:
135
Company:
Part Number:
FDS2670
Quantity:
1 600
Part Number:
FDS2670-NL
Manufacturer:
FSC
Quantity:
40 000
Part Number:
FDS2670-NL
Manufacturer:
FAIRCHILD
Quantity:
5 000
Part Number:
FDS2670_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS2670
200V N-Channel PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
dv/dt
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
JA
JC
(ON)
Device Marking
STG
N-Channel
specifications.
FDS2670
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Peak Diode Recovery dv/dt
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
MOSFET
SO-8
D
D
– Continuous
– Pulsed
has
S
FDS2670
Device
Parameter
S
been
S
G
designed
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1c)
(Note 3)
(Note 1)
Features
3.0 A, 200 V. R
Low gate charge
Fast switching speed
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
6
5
7
8
Tape width
DS(ON)
12mm
Ratings
55 to +150
200
125
3.0
2.5
1.2
1.0
3.2
20
50
25
20
= 130 m @ V
4
3
2
1
August 2001
GS
FDS2670 Rev C1(W)
2500 units
= 10 V
Quantity
Units
V/ns
C/W
C/W
C/W
W
V
V
A
C

Related parts for FDS2670

FDS2670 Summary of contents

Page 1

... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 3) (Note 1a) (Note 1c) (Note 1) Reel Size 13’’ August 2001 = 130 DS(ON Ratings Units 200 3 2.5 W 1.2 1.0 3.2 V/ +150 C 50 C/W 125 C/W 25 C/W Tape width Quantity 12mm 2500 units FDS2670 Rev C1(W) ...

Page 2

... A, Referenced 160 – 250 250 A, Referenced =125 3 100 1.0 MHz V = 100 GEN V = 100 2.1 A (Note Min Typ Max Units 375 mJ 3.0 A 200 V 214 mV 100 nA –100 4.5 V –10 mV/ C 100 130 m 205 275 1228 pF 112 2.1 A 0.7 1.2 V FDS2670 Rev C1(W) ...

Page 3

... Scale letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2. 3A, di/dt 100A Starting DSS is determined by the user's board design 105°/W when mounted pad copper = 125°/W when mounted on a minimum pad. FDS2670 Rev C1(W) ...

Page 4

... Figure 4. On-Resistance Variation with 100 0 0.01 0.001 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 6.0V 6.5V 10. DRAIN CURRENT ( 1 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS2670 Rev C1( 1.4 ...

Page 5

... Figure 10. Single Pulse Maximum 0 TIME (sec 1MHz OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 125°C/W JA P(pk ( Duty Cycle 100 1000 FDS2670 Rev C1(W) 100 1000 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

Related keywords