RSU002P03T106 Rohm Semiconductor, RSU002P03T106 Datasheet
RSU002P03T106
Specifications of RSU002P03T106
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RSU002P03T106 Summary of contents
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Transistors 4V Drive Pch MOSFET RSU002P03 Structure Silicon P-channel MOSFET Features 1) Low On-resistance 2) 4V drive Applications Switching Packaging specifications Package Taping Type Code T106 Basic ordering unit (pieces) 3000 RSU002P03 Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source ...
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Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance Y ...
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Transistors Electrical characteristics curves 100 Ta=25°C f=1MHz V =0V GS Ciss 10 Crss Coss 1 0.01 0 DRAIN-SOURCE VOLTAGE : −V (V) DS Fig.1 Typical Capacitance vs. Drain-Source Voltage 1 − 10V DS Pulsed Ta=125°C 0.1 ...
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Transistors 10 Ta=25°C Pulsed = −4. −4.5V −10V 1 0 0.01 0.1 DRAIN CURRENT : −I (A) D Fig.10 Static Drain-Source On-State Resistance vs. Drain current ( Ι RSU002P03 Rev.A 4/4 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...