IRF6609 International Rectifier, IRF6609 Datasheet - Page 3

• Manufacturer Part Number: IRF6609
• Description: MOSFET N-CH 20V 31A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6609

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 69nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6290pF @ 10V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MT
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 m Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 31 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 9.8 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 95 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6609TR

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1000.0
100.0
Fig 3. Typical Transfer Characteristics
1000
10.0
Fig 1. Typical Output Characteristics
100
1.0
0.1
0.1
10
1
2.0
0.1
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2.7V
3.0
T J = 25°C
1
V DS = 10V
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
4.0
10
TOP
BOTTOM
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
5.0
100
1.5
1.0
0.5
Fig 2. Typical Output Characteristics
1000
100
10
Fig 4. Normalized On-Resistance
1
-60 -40 -20
0.1
I D = 31A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
0
2.7V
20
1
40
≤ 60µs PULSE WIDTH
Tj = 150°C
60
80 100 120 140 160
10
TOP
BOTTOM
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
3
100