IRF6609 International Rectifier, IRF6609 Datasheet - Page 7

• Manufacturer Part Number: IRF6609
• Description: MOSFET N-CH 20V 31A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6609

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 69nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6290pF @ 10V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MT
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 m Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 31 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 9.8 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 95 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6609TR

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Fig 14. On-Resistance Vs. Gate Voltage
Fig 18a. Unclamped Inductive Test Circuit
Fig 17a. Switching Time Test Circuit
Fig 16a. Gate Charge Test Circuit
10
8
6
4
2
0
2.0
R G
20V
V
V DS
12V
GS
V
GS
t p
Duty Factor < 0.1%
V GS , Gate-to-Source Voltage (V)
Same Type as D.U.T.
Pulse Width < 1µs
V
Current Regulator
GS
.2µF
I AS
4.0
D.U.T
V
50KΩ
3mA
0.01 Ω
L
DS
Current Sampling Resistors
.3µF
I
G
D.U.T
D.U.T.
L
6.0
D
15V
I
D
V
DD
DRIVER
+
-
+
-
V
DS
T J = 125°C
T J = 25°C
+
-
V DD
A
8.0
I D = 31A
10.0
1000
800
600
400
200
Fig 18b. Unclamped Inductive Waveforms
0
25
Fig 15. Maximum Avalanche Energy
Fig 17b. Switching Time Waveforms
Fig 16b. Gate Charge Waveform
90%
V
10%
V
DS
Starting T J , Junction Temperature (°C)
GS
I
AS
50
t
d(on)
Vgs(th)
Qgs1 Qgs2
Vs. Drain Current
Vds
t
r
t p
75
Qgd
t
d(off)
100
V
(BR)DSS
Qgodr
TOP
BOTTOM
t
f
125
Vgs
14A
11A
25A
I D
Id
150
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