IRFZ34VSPBF International Rectifier, IRFZ34VSPBF Datasheet - Page 4

• Manufacturer Part Number: IRFZ34VSPBF
• Description: MOSFET N-CH 60V 30A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ34VSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1120pF @ 25V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ34VSPBF

4
2000
1600
1200
1000
800
400
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
V
V
DS
T = 175 C
SD
0.4
J
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
=
=
=
=
°
0V,
C
C
C
0.8
gs
gd
ds
T = 25 C
J
C oss
C rss
+ C
+ C
C iss
10
f = 1MHz
gd ,
gd
°
1.2
C
ds
SHORTED
V
1.6
GS
= 0 V
100
2.0
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
1
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 175 C
30A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
10
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
10
20
BY R
V
V
V
DS
DS
DS
DS(on)
= 48V
= 30V
= 12V
FOR TEST CIRCUIT
30
10us
100us
1ms
10ms
SEE FIGURE
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100
40
13
1000
50