IRF540ZPBF International Rectifier, IRF540ZPBF Datasheet

IRF540ZPBF

Manufacturer Part Number

IRF540ZPBF

Description

MOSFET N-CH 100V 36A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF540ZPBF.pdf (13 pages)

2.IRF540ZPBF.pdf (3 pages)

Specifications of IRF540ZPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

26.5 mOhm @ 22A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

36A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

63nC @ 10V

Input Capacitance (ciss) @ Vds

1770pF @ 25V

Power - Max

92W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Application

For automotive applications

Channel Type

N-Channel

Current, Drain

36 A

Fall Time

39 ns (Typ.)

Gate Charge, Total

42 nC

Mounting And Package Type

PCB Mount and TO-220AB Package

Operating And Storage Temperature

-55 to +175 °C (Max.)

Package Type

TO-220AB

Polarization

N-Channel

Power Dissipation

92 W

Resistance, Drain To Source On

21 Milliohms

Resistance, Thermal, Junction To Case

1.64 °C⁄W (Max.)

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Thermal Resistance, Junction To Ambient

62 °C⁄W

Time, Rise

51 ns (Typ.)

Time, Turn-off Delay

43 ns

Time, Turn-on Delay

15 ns

Transconductance, Forward

36 V

Voltage, Breakdown, Drain To Source

100 V

Voltage, Diode Forward

1.3 V (Typ.)

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

36 A

Mounting Style

Through Hole

Gate Charge Qg

42 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRF540ZPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF540ZPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRF540ZPBF

Quantity:

4 000

Current page: 1 of 13
Download datasheet (303Kb)

Specifically designed for Automotive applications,

this HEXFET

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of

this design are a 175°C junction operating tempera-

ture, fast switching speed and improved repetitive

avalanche rating . These features combine to make

this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety

of other applications.

Features

Description

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

STG

AS (Thermally limited)

θJC

θCS

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

(Tested )

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Power Dissipation

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount)

Power MOSFET utilizes the latest

Ã™

Parameter

™

AUTOMOTIVE MOSFET

@ 10V

(Silicon Limited)

TO-220AB

IRF540Z

HEXFET

See Fig.12a, 12b, 15, 16

Typ.

300 (1.6mm from case )

0.50

–––

10 lbf

-55 to + 175

IRF540ZS

Max.

in (1.1N

0.61

140

± 20

120

Pak

DS(on)

Power MOSFET

DSS

Max.

1.64

–––

IRF540ZS

IRF540ZL

= 36A

= 26.5mΩ

= 100V

IRF540Z

PD - 94758

IRF540ZL

TO-262

Units

W/°C

°C/W

°C

Related parts for IRF540ZPBF

IRF540ZPBF Summary of contents

Page 1

Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, ® this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 100 5.0V BOTTOM 4.5V 10 4.5V 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

0V MHZ C iss = SHORTED 2500 C rss = oss = 2000 Ciss 1500 1000 500 ...

Page 5

Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ...

Page 6

D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-08 1.0E-07 Fig 15. Typical Avalanche Current Vs.Pulsewidth 100 TOP Single Pulse 90 BOTTOM 10% Duty Cycle 20A ...

Page 8

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ...

Page 10

Dimensions are shown in millimeters (inches HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" For GB Production T HIS IS AN ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information www.irf.com IGBT 1- GATE 2- COLLEC- TOR 11 ...

Page 12

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes: Repetitive rating; ...

Page 13

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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