IRL1404ZSTRLPBF International Rectifier, IRL1404ZSTRLPBF Datasheet

IRL1404ZSTRLPBF

Manufacturer Part Number

IRL1404ZSTRLPBF

Description

MOSFET N-CH 40V 75A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRL1404ZSTRLPBF.pdf (12 pages)

2.IRL1404ZSTRLPBF.pdf (13 pages)

Specifications of IRL1404ZSTRLPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

3.1 mOhm @ 75A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

2.7V @ 250µA

Gate Charge (qg) @ Vgs

110nC @ 5V

Input Capacitance (ciss) @ Vds

5080pF @ 25V

Power - Max

200W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Transistor Polarity

N Channel

Continuous Drain Current Id

200A

Drain Source Voltage Vds

40V

On Resistance Rds(on)

2.5mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

2.7V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRL1404ZSTRLPBFTR

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Features

Description

Specifically designed for Automotive applications,

this HEXFET

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient and

reliable device for use in Automotive applications

and a wide variety of other applications.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

STG

AS (Thermally limited)

θJC

θCS

θJA

@ T

Logic Level

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

(Tested )

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Continuous Drain Current, V

= 25°C Power Dissipation

Power MOSFET utilizes the latest

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount)

Parameter

AUTOMOTIVE MOSFET

@ 10V

jÃ

(Silicon Limited)

(Package Limited)

TO-220AB

IRL1404Z

HEXFET

See Fig.12a, 12b, 15, 16

Typ.

300 (1.6mm from case )

0.50

–––

10 lbf

IRL1404ZS

-55 to + 175

Max.

in (1.1N

200

140

790

230

± 16

220

490

1.5

Pak

IRL1404ZS

IRL1404ZL

Power MOSFET

DS(on)

IRL1404Z

Max.

DSS

0.65

–––

= 75A

PD - 94804B

IRL1404ZL

= 3.1mΩ

= 40V

TO-262

Units

W/°C

°C/W

°C

Related parts for IRL1404ZSTRLPBF

IRL1404ZSTRLPBF Summary of contents

Page 1

Features Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Description Specifically designed for Automotive applications, ® this HEXFET Power MOSFET utilizes the latest ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 175°C 100 25° 10V 60µs ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 ...

Page 5

Limited By Package 150 100 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 0. 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current vs.Pulsewidth 250 TOP Single Pulse BOTTOM 1% Duty Cycle 75A 200 150 100 ...

Page 8

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 3X 1.40 (.055) 3X 1.15 (.045) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING ...

Page 10

Dimensions are shown in millimeters (inches www.irf.com ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information OR www.irf.com IGBT 1- GATE 2- COLLECTOR 3- EMITTER 11 ...

Page 12

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

Page 13

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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