IRF3710ZPBF International Rectifier, IRF3710ZPBF Datasheet

MOSFET N-CH 100V 59A TO-220AB

IRF3710ZPBF

Manufacturer Part Number
IRF3710ZPBF
Description
MOSFET N-CH 100V 59A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF3710ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
59A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
2900pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
59 A
Gate Charge, Total
82 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
160 W
Resistance, Drain To Source On
14 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
41 ns
Time, Turn-on Delay
17 ns
Transconductance, Forward
35 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
59 A
Mounting Style
Through Hole
Gate Charge Qg
82 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF3710ZPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF3710ZPBF
Manufacturer:
TOSHIBA
Quantity:
5 000
Part Number:
IRF3710ZPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF3710ZPBF
Quantity:
8 500
Features
Description
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
HEXFET
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
(tested)
C
C
C
= 25°C
= 100°C
= 25°C
®
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Parameter
Parameter
AUTOMOTIVE MOSFET
GS
GS
h
@ 10V (Silicon Limited)
@ 10V (See Fig. 9)
G
TO-220AB
i
IRF3710Z
j
d
300 (1.6mm from case )
See Fig.12a,12b,15,16
HEXFET
Typ.
0.50
–––
–––
–––
10 lbf•in (1.1N•m)
S
D
-55 to + 175
IRF3710ZSPbF
IRF3710ZS
IRF3710ZLPbF
Max.
D
IRF3710ZPbF
± 20
240
160
170
200
1.1
59
42
2
Pak
®
R
Power MOSFET
Max.
V
DS(on)
0.92
–––
62
40
DSS
I
D
= 59A
= 100V
IRF3710ZL
= 18mΩ
PD - 95466
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRF3710ZPBF Summary of contents

Page 1

... Junction-to-Ambient (PCB Mount, steady state) θJA ® HEXFET is a registered trademark of International Rectifier. AUTOMOTIVE MOSFET G TO-220AB IRF3710Z Parameter @ 10V (Silicon Limited 10V (See Fig Parameter 95466 IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF ® HEXFET Power MOSFET 100V DSS R = 18mΩ DS(on 59A Pak TO-262 ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current ...

Page 3

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 3X 0.69 ...

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