IXTA200N085T IXYS, IXTA200N085T Datasheet - Page 2

• Manufacturer Part Number: IXTA200N085T
• Description: MOSFET N-CH 85V 200A TO-263
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA200N085T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 152nC @ 10V
• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Power - Max: 480W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 85 V
• Continuous Drain Current: 200 A
• Power Dissipation: 480 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 85
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0050
• Ciss, Typ, (pf): 7600
• Qg, Typ, (nc): 152
• Trr, Typ, (ns): 90
• Trr, Max, (ns): -
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
T
I
I
V
t
IXYS MOSFETs and IGBTs are covered by 4,835,592
SM
d(on)
d(off)
f
S
r
rr
Notes: 1.
one or moreof the following U.S. patents:
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
J
oss
thJC
thCH
SD
iss
rss
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
J
= 25° C unless otherwise specified)
= 25° C unless otherwise specified)
2. On through-hole packages, R
location is 5 mm or less from the package body.
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
Test Conditions
V
V
Resistive Switching Times
V
R
V
TO-220
Test Conditions
V
Pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 25 A, V
= 25 A, -di/dt = 100 A/µs
= 40 V, V
= 10 V; I
= 5 Ω (External)
= 10 V, V
PRELIMINARY TECHNICAL INFORMATION
= 0 V
= 0 V, V
= 10 V, V
GS
DS
D
GS
DS
= 60 A, Note 1
DS
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,850,072
4,881,106
DSS
DSS
JM
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 25 A
DS(on)
= 25 A
Kelvin test contact
5,049,961
5,063,307
5,187,117
Min.
Min.
5,237,481
5,381,025
5,486,715
72
Characteristic Values
Characteristic Values
7600
1040
Typ.
Typ.
0.50
125
200
152
32
80
65
64
37
42
90
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.31 °C/W
200
540
1.0
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
n s
n s
n s
ns
ns
S
V
A
A
TO-263AA (IXTA) Outline
TO-220AB (IXTP) Outline
6,683,344
6,710,405B2
6,710,463
Pins: 1 - Gate
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Pins: 1 - Gate
3 - Source 4, TAB - Drain
14.61
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
2.29
1.02
1.27
0.46
Min.
3 - Source 4, TAB - Drain
Millimeter
0
6,727,585
6,759,692
6771478 B2
IXTP200N085T
IXTA200N085T
10.29
15.88
Max.
BSC
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
8.13
2.79
1.40
1.78
0.38
0.74
2 - Drain
2 - Drain
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
.018
Min.
7,005,734 B2
7,063,975 B2
7,071,537
Inches
0
Max.
BSC
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.015
.029