IXTA200N085T IXYS, IXTA200N085T Datasheet - Page 5

MOSFET N-CH 85V 200A TO-263

IXTA200N085T

Manufacturer Part Number
IXTA200N085T
Description
MOSFET N-CH 85V 200A TO-263
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA200N085T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
152nC @ 10V
Input Capacitance (ciss) @ Vds
7600pF @ 25V
Power - Max
480W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
85 V
Continuous Drain Current
200 A
Power Dissipation
480 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0050
Ciss, Typ, (pf)
7600
Qg, Typ, (nc)
152
Trr, Typ, (ns)
90
Trr, Max, (ns)
-
Pd, (w)
480
Rthjc, Max, (k/w)
0.31
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2006 IXYS CORPORATION All rights reserved
180
160
140
120
100
100
72
70
68
66
64
62
60
58
56
54
52
50
80
60
40
20
90
80
70
60
50
40
30
24 26 28 30 32 34 36 38 40 42 44 46 48 50
25
4
t
T
V
Switching Times vs. Gate Resistance
r
J
t
R
V
DS
f
Switching Times vs. Drain Current
35
= 125ºC, V
G
DS
6
Rise Time vs. Junction Temperature
= 43V
= 5 Ω , V
= 43V
I
I
D
D
Fig. 17. Resistive Turn-off
= 25A
Fig. 15. Resistive Turn-on
45
= 50A
t
t
8
d(off)
d(on)
Fig. 13. Resistive Turn-on
GS
GS
= 10V
- - - -
T
- - - -
55
I
= 10V
D
J
R
10
- Amperes
- Degrees Centigrade
G
I
D
- Ohms
= 50A
65
12
75
14
85
I
D
16
= 25A
T
95
T
T
T
J
J
J
J
= 125ºC
=125ºC
= 25ºC
= 25ºC
18
R
V
V
105
G
GS
DS
= 5 Ω
= 10V
= 43V
20
115
105
100
95
90
85
80
75
70
65
60
55
50
65
60
55
50
45
40
35
30
25
125
200
180
160
140
120
100
70
68
66
64
62
60
58
56
54
52
100
80
60
40
90
80
70
60
50
40
30
25
25
4
Switching Times vs. Junction Temperature
t
R
V
f
G
DS
Switching Times vs. Gate Resistance
t
T
V
35
R
V
V
f
J
DS
= 5 Ω , V
G
GS
DS
= 125ºC, V
= 43V
6
= 5 Ω
= 43V
= 43V
= 10V
45
t
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
d(off)
T
30
GS
t
J
8
Rise Time vs. Drain Current
d(off)
Fig. 14. Resistive Turn-on
55
- Degrees Centigrade
- - - -
= 10V
I
GS
D
- - - -
= 50A
= 10V
10
R
65
G
I
D
- Ohms
35
- Amperes
75
12
IXYS REF: T_200N085T (61) 11-20-06-A.xls
T
85
T
J
14
J
= 125ºC
IXTP200N085T
= 25ºC
IXTA200N085T
40
I
D
95
I
D
= 25A
16
= 50A
I
D
105
= 25A
18
115
45
20
125
320
290
260
230
200
170
140
110
80
97
94
91
88
85
82
79
76
73
70
50

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