STW7N95K3 STMicroelectronics, STW7N95K3 Datasheet - Page 5

• Manufacturer Part Number: STW7N95K3
• Description: MOSFET N-CH 950V 7.2A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW7N95K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.35 Ohm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 950V
• Current - Continuous Drain (id) @ 25° C: 7.2A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1031pF @ 100V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.35 Ohms
• Drain-source Breakdown Voltage: 950 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7.2 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8798-5

STF7N95K3, STP7N95K3, STW7N95K3
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
SD
d(on)
d(off)
RRM
RRM
GSO
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
I
I
V
I
V
(see
Igs=± 1mA (open drain)
V
R
(see
SD
SD
SD
DD
DD
DD
G
= 7.2 A, V
= 7.2 A, di/dt = 100A/µs
= 7.2 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 60 V (see
= 60 V, T
Figure
= 475 V, I
Figure
Test conditions
Test conditions
Test conditions
24)
19)
GS
j
GS
= 150 °C
D
= 3.6 A,
= 0
Figure
= 10 V
24)
Electrical characteristics
Min.
Min.
Min.
30
Typ. Max. Unit
Typ.
450
550
Typ.
28
28
14
36
23
9
6
8
28.8
Max. Unit
Max Unit
7.2
1.6
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
5/15
V