IXTH16P60P IXYS, IXTH16P60P Datasheet

MOSFET P-CH 600V 16A TO-247

IXTH16P60P

Manufacturer Part Number
IXTH16P60P
Description
MOSFET P-CH 600V 16A TO-247
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTH16P60P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
720 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
92nC @ 10V
Input Capacitance (ciss) @ Vds
5120pF @ 25V
Power - Max
460W
Mounting Type
Through Hole
Package / Case
TO-247
Vdss, Max, (v)
-600.0
Id(cont), Tc=25°c, (a)
-16.0
Rds(on), Max, Tj=25°c, (?)
0.720
Ciss, Typ, (pf)
5120
Qg, Typ, (nc)
92
Trr, Typ, (ns)
440
Pd, (w)
460
Rthjc, Max, (k/w)
0.27
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque
TO-247
V
V
V
V
V
V
Test Conditions
TO-268
S
TM
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 0V
= -10V, I
DM
GS
, V
DSS
, I
DD
D
D
= - 250μA
D
≤ V
= - 250μA
DS
= 0.5 • I
DSS
= 0V
, T
(TO-247)
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
JM
= 125°C
IXTH16P60P
IXTT16P60P
- 55 ... +150
- 55 ... +150
- 600
- 2.5
Maximum Ratings
Characteristic Values
1.13 / 10
Min.
- 600
- 600
- 16
- 48
- 16
±20
±30
460
150
300
260
2.5
10
Typ.
5
6
- 200 μA
±100 nA
- 4.5
Nm/lb.in.
- 25 μA
720 mΩ
Max.
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
V
g
g
J
V
I
R
TO-268 (IXTT)
TO-247 (IXTH)
G = Gate
S = Source
Features:
Applications:
Advantages:
D25
International standard packages
Avalanche Rated
Rugged PolarP
Low package inductance
- easy to drive and to protect
High side switching
Push-pull amplifiers
DC Choppers
Current regulators
Automatic test equipment
Low gate charge results in simple
drive requirement
High power density
Fast switching
Easy to parallel
DS(on)
DSS
G
D
S
G
≤ ≤ ≤ ≤ ≤
=
=
S
D
TAB = Drain
TM
- 600V
- 16A
process
720mΩ Ω Ω Ω Ω
= Drain
D (TAB)
D (TAB)
DS99988(5/08)

Related parts for IXTH16P60P

IXTH16P60P Summary of contents

Page 1

... ±20V GSS DSS DS DSS -10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTH16P60P IXTT16P60P Maximum Ratings - 600 = 1MΩ - 600 GS ±20 ± 2.5 ≤ 150° 460 - 55 ... +150 150 - 55 ... +150 300 260 1. Characteristic Values Min. Typ. ...

Page 2

... A Q 5. 2.8 V TO-268 (IXTT) Outline ns μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTH16P60P IXTT16P60P ∅ Drain Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2.13 ...

Page 3

... J -20 -25 -30 -35 Fig. 2. Extended Output Characteristics @ 25º -12 -15 - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V -16A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature - -50 - Degrees Centigrade J IXTH16P60P IXTT16P60P = -10V -21 -24 - 100 125 150 100 125 150 ...

Page 4

... Fig. 8. Transconductance -10 - Amperes D Fig. 10. Gate Charge - 300V - -1mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on) 10.0 DC 100ms - 1.0 10ms T = 150º 25ºC C Single Pulse - 0 100 V - Volts DS IXTH16P60P IXTT16P60P 40ºC J 25ºC 125ºC -14 -16 -18 - 100 100µs 1ms - 1000 ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTH16P60P IXTT16P60P 0.1 1 IXYS REF: T_16P60P (B7) 6-03-08 10 ...

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