IXFH50N20 IXYS, IXFH50N20 Datasheet

MOSFET N-CH 200V 50A TO-247AD

IXFH50N20

Manufacturer Part Number
IXFH50N20
Description
MOSFET N-CH 200V 50A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Type
Power MOSFETr
Datasheet

Specifications of IXFH50N20

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
220nC @ 10V
Input Capacitance (ciss) @ Vds
4400pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.045Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Drain Current (max)
50A
Power Dissipation
300W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.045 Ohms
Forward Transconductance Gfs (max / Min)
32 s
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.045
Ciss, Typ, (pf)
4400
Qg, Typ, (nc)
190
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH50N20
Manufacturer:
IXYS
Quantity:
167
Part Number:
IXFH50N20
Manufacturer:
FUJI
Quantity:
6 000
Part Number:
IXFH50N20
Manufacturer:
ST
0
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
IXYS reserves the right to change limits, test conditions, and dimensions.
N-Channel Enhancement Mode
High dv/dt, Low t
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AR
D
DSS
GS
GSM
DSS
GS(th)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
S
V
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
TM
DM
, di/dt £ 100 A/ms, V
GS
rr
, HDMOS
, I
D
D
DC
= 250 mA
DSS
= 4 mA
G
, V
= 2 W
DS
= 0
TM
GS
= 1 MW
Family
DD
T
T
£ V
J
J
(T
= 25°C
= 125°C
DSS
J
= 25°C, unless otherwise specified)
JM
,
IXFH/IXFM42N20
IXFH/IXFM/IXFT50N20
IXFH/IXFT58N20
42N20
50N20
58N20
42N20
50N20
58N20
42N20
50N20
58N20
TO-204 = 18 g, TO-247 = 6 g
min.
200
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
200
200
±20
±30
168
200
232
300
150
300
42
50
58
42
50
58
30
5
max.
±100
200
4
1 mA
V/ns
mJ
nA
mA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
A
A
A
A
V
V
TO-204 AE (IXFM)
TO-268 (D3) Case Style
G = Gate,
S = Source,
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
• High power surface mountable package
• High power density
TO-247 AD (IXFH)
rated
- easy to drive and to protect
power supplies
(isolated mounting screw hole)
200 V
200 V
200 V
V
t
DS (on)
DSS
rr
£ 200 ns
HDMOS
G
D = Drain,
TAB = Drain
42 A 60mW
50 A 45mW
58 A 40mW
S
I
TM
D25
process
S
D
91522H (2/98)
R
DS(on)
(TAB)
G
(TAB)
1 - 4

Related parts for IXFH50N20

IXFH50N20 Summary of contents

Page 1

... GS(th ± GSS 0.8 • V DSS DS DSS IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 TM Family Maximum Ratings 200 = 1 MW 200 GS ±20 ±30 42N20 42 50N20 50 58N20 58 42N20 168 JM 50N20 ...

Page 2

... L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH/IXFM58N20 IXFT50N20 TO-247 AD (IXFH) Outline Max. 0.060 W 0.045 W 0.040 ...

Page 3

... V = 10V GS 1.2 1.0 0 100 I - Amperes D Fig. 5 Drain Current vs. Case Temperature 80 70 58N20 60 50N20 50 42N20 -50 - Degrees C C © 2000 IXYS All rights reserved IXFH/IXFM42N20 IXFH/IXFM50N20 V = 10V 15V GS 125 150 175 75 100 125 150 IXFH/IXFM58N20 IXFT50N20 IXFT58N20 Fig. 2 Input Admittance 100 25° ...

Page 4

... V - Volts DS Fig.11 Transient Thermal Impedance D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved IXFH/IXFM42N20 IXFH/IXFM58N20 IXFT50N20 IXFH/IXFM50N20 Fig.8 Forward Bias Safe Operating Area 100 Limited Fig.10 Source Current vs. Source 0.4 ...

Related keywords