IRF7207TRPBF International Rectifier, IRF7207TRPBF Datasheet - Page 5
![MOSFET P-CH 20V 5.4A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7207TRPBF
Manufacturer Part Number
IRF7207TRPBF
Description
MOSFET P-CH 20V 5.4A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7207TRPBF.pdf
(7 pages)
Specifications of IRF7207TRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 5.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.4A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Input Capacitance (ciss) @ Vds
780pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
60 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 5.4 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
15 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7207PBFTR
IRF7207TRPBF
IRF7207TRPBFTR
IRF7207TRPBF
IRF7207TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7207TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.1
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
400
300
200
100
0
25
0.1
Fig 10. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
50
1. Duty factor D = t / t
2. Peak T = P
Notes:
Vs. Drain Current
J
1
J
75
DM
x Z
1
thJA
100
P
2
DM
+ T
TOP
BOTTOM
10
A
t
1
125
t
2
-2.4A
-4.3A
-5.4A
°
I D
5
100
150