FDD6690A Fairchild Semiconductor, FDD6690A Datasheet - Page 5

• Manufacturer Part Number: FDD6690A
• Description: MOSFET N-CH 30V 12A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6690A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 5V
• Input Capacitance (ciss) @ Vds: 1230pF @ 15V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 m Ohms
• Forward Transconductance Gfs (max / Min): 47 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 3.3 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6690ATR

Typical Characteristics
10
1000
0.01
8
6
4
2
0
100
0.1
10
0
1
Figure 9. Maximum Safe Operating Area
0.1
Figure 7. Gate Charge Characteristics
I
0.0001
D
0.001
= 12 A
R
SINGLE PULSE
0.01
R
DS(ON)
0.1
V
JA
T
0.0001
1
GS
A
= 96
= 25
= 4.5V
LIMIT
5
o
o
C/W
C
V
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
Q
0.2
0.1
g
1
0.05
, GATE CHARGE (nC)
10
0.02
DC
0.01
0.001
SINGLE PULSE
10
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1s
Figure 11. Transient Thermal Response Curve
15
100ms
V
DS
= 10V
10ms
10
15V
0.01
1ms
20
100µs
20V
25
100
0.1
t
1
, TIME (sec)
100
1800
1500
1200
80
60
40
20
900
600
300
0
0.01
0
0
Figure 8. Capacitance Characteristics
C
Figure 10. Single Pulse Maximum
1
rss
5
V
0.1
DS
Power Dissipation
, DRAIN TO SOURCE VOLTAGE (V)
10
10
C
t
1
oss
, TIME (sec)
15
1
C
iss
P(pk)
Duty Cycle, D = t
T
R
J
R
- T
JA
100
20
JA
(t) = r(t) * R
A
t
= 96 °C/W
1
= P * R
t
2
10
SINGLE PULSE
V
R
f = 1MHz
GS
T
FDD6690A Rev. EW)
JA
25
A
= 0 V
= 96°C/W
JA
= 25°C
1
JA
(t)
/ t
2
1000
30
100