STB3N62K3 STMicroelectronics, STB3N62K3 Datasheet - Page 10

• Manufacturer Part Number: STB3N62K3
• Description: MOSFET N-CH 620V 2.7A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB3N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 385pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8476-2

Test circuits
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Figure 16. Switching times test circuit for
Figure 18. Test circuit for inductive load
Figure 20. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuits
STB3N62K3, STD3N62K3, STF3N62K3, STP3N62K3, STU3N62K3
Doc ID 14894 Rev 2
Figure 17. Gate charge test circuit
Figure 19. Unclamped Inductive load test
Figure 21. Switching time waveform
circuit