FDA24N40F Fairchild Semiconductor, FDA24N40F Datasheet - Page 3

• Manufacturer Part Number: FDA24N40F
• Description: MOSFET N-CH 400V 23A TO-3PN
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA24N40F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 3030pF @ 25V
• Power - Max: 235W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 235000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA24N40F Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
5000
4000
3000
2000
1000
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.1
70
10
0
1
0.02
0.1
0
V
GS
Drain Current and Gate Voltage
=
10.0V
15.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
V
C
DS
C
C
DS
rss
0.1
oss
iss
20
, Drain-Source Voltage [V]
,Drain-Source Voltage[V]
I
D
, Drain Current [A]
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
V
GS
40
= 10V
*Notes:
1. 250
2. T
1
*Note: T
C
V
= 25
µ
GS
(
s Pulse Test
C ds = shorted
60
*Note:
= 20V
o
C
1. V
2. f = 1MHz
10
J
= 25
GS
= 0V
o
10
C
)
30
80
15
3
100
Figure 2. Transfer Characteristics
100
Figure 4. Body Diode Forward Voltage
200
10
Figure 6. Gate Charge Characteristics
10
10
1
8
6
4
2
0
1
4
0.0
0
V
SD
10
150
Variation vs. Source Current
, Body Diode Forward Voltage [V]
and Temperature
V
0.4
Q
5
GS
o
g
C
,Gate-Source Voltage[V]
, Total Gate Charge [nC]
150
20
V
V
V
o
DS
DS
DS
C
25
= 100V
= 200V
= 320V
6
0.8
o
C
*Notes:
1. V
2. 250
30
*Notes:
1. V
2. 250
DS
*Note: I
GS
25
µ
= 20V
s Pulse Test
µ
o
= 0V
s Pulse Test
C
7
1.2
40
D
= 23A
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50
8
1.6