FDA24N40F Fairchild Semiconductor, FDA24N40F Datasheet - Page 4

• Manufacturer Part Number: FDA24N40F
• Description: MOSFET N-CH 400V 23A TO-3PN
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA24N40F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 3030pF @ 25V
• Power - Max: 235W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 235000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA24N40F Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Drain Current
1.2
1.1
1.0
0.9
0.8
25
20
15
10
-100
5
0
25
vs. Temperature
vs. Case Temperature
-50
50
T
T
J
C
, Junction Temperature
, Case Temperature
1E-3
0.01
0.1
0
1
10
75
Figure 10. Transient Thermal Response Curve
0.05
0.5
0.02
0.01
Single pulse
0.2
0.1
-5
50
100
10
100
-4
[
o
*Notes:
C
[
1. V
2. I
]
o
125
C
D
150
GS
]
= 250
10
= 0V
Rectangular Pulse Duration [sec]
-3
µ
A
200
150
(Continued)
10
-2
4
10
Figure 8. Maximum Safe Operating Area
-1
0.01
100
200
0.1
10
1
1
*Notes:
Operation in This Area
is Limited by R
1. Z
2. Duty Factor, D= t
3. T
10
P
DM
θ
JM
0
JC
- T
(t) = 0.53
V
C
DS
= P
t
, Drain-Source Voltage [V]
1
t
DM
10
2
10
o
DS(on)
C/W Max.
1
* Z
1
θ
/t
JC
2
(t)
10
*Notes:
DC
1. T
2. T
3. Single Pulse
2
10ms
C
J
100
1ms
= 150
= 25
100
o
o
C
µ
C
s
www.fairchildsemi.com
30
µ
s
800