IRFZ44NPBF International Rectifier, IRFZ44NPBF Datasheet

MOSFET N-CH 55V 49A TO-220AB

IRFZ44NPBF

Manufacturer Part Number
IRFZ44NPBF
Description
MOSFET N-CH 55V 49A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRFZ44NPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
49A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1470pF @ 25V
Power - Max
94W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
49 A
Gate Charge, Total
63 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
94 W
Resistance, Drain To Source On
17.5 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
44 ns
Time, Turn-on Delay
12 ns
Transconductance, Forward
19 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0175Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±20V
Drain Current (max)
49A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
41 A
Mounting Style
Through Hole
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFZ44NPBF

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0
l
l
l
l
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Absolute Maximum Ratings
Thermal Resistance
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
www.irf.com
Description
I
I
I
P
V
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AR
θJC
θCS
θJA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs from International
Parameter
Parameter


ƒ
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
10 lbf•in (1.1N•m)
HEXFET
IRFZ44NPbF
-55 to + 175
S
D
TO-220AB
Max.
0.63
160
± 20
9.4
5.0
49
35
94
25
®
R
DS(on)
Power MOSFET
Max.
V
–––
1.5
62
DSS
I
D
= 49A
PD - 94787B
= 17.5mΩ
= 55V
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1

IRFZ44NPBF Summary of contents

Page 1

... Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G @ 10V GS @ 10V GS    ƒ 300 (1.6mm from case ) Typ. 0. 94787B IRFZ44NPbF ® HEXFET Power MOSFET 55V DSS R = 17.5mΩ DS(on 49A D S TO-220AB Max. Units 160 94 W 0.63 W/° ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° T ...

Page 4

1MHz iss rss 2000 oss iss 1500 1000 C oss 500 C ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 SINGLE PULSE 0.02 0.01 (THERMAL ...

Page 6

D.U 20V 0.01 Ω Charge 6 300 15V 240 DRIVER 180 + 120 60 ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

E XAMPLE : T HIS 1010 L OT CODE 1789 AS S EMB 19, 2000 EMB LY L INE "C" Note: "P" embly line ...

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