IRFZ44NPBF International Rectifier, IRFZ44NPBF Datasheet - Page 4

MOSFET N-CH 55V 49A TO-220AB

IRFZ44NPBF

Manufacturer Part Number
IRFZ44NPBF
Description
MOSFET N-CH 55V 49A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRFZ44NPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
49A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1470pF @ 25V
Power - Max
94W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
49 A
Gate Charge, Total
63 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
94 W
Resistance, Drain To Source On
17.5 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
44 ns
Time, Turn-on Delay
12 ns
Transconductance, Forward
19 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0175Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±20V
Drain Current (max)
49A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
41 A
Mounting Style
Through Hole
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFZ44NPBF

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4
2500
2000
1500
1000
1000
500
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T = 175 C
V
J
V
DS
SD
Forward Voltage
V
C
C
C
0.6
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
°
=
=
=
=
0V,
C
C
C
gs
gd
ds
T = 25 C
J
C oss
C rss
+ C
+ C
C iss
1.2
10
f = 1MHz
gd ,
gd
°
C
ds
1.8
SHORTED
V
GS
= 0 V
100
2.4
1000
100
0.1
10
20
16
12
Fig 8. Maximum Safe Operating Area
1
8
4
0
0
1
Fig 6. Typical Gate Charge Vs.
Tc = 25°C
Tj = 175°C
Single Pulse
I =
D
25A
Gate-to-Source Voltage
10
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
G
20
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V
V
V
30
DS
DS
DS
10
= 44V
= 27V
= 11V
40
www.irf.com
50
10msec
100µsec
1msec
60
100
70

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