IXFH18N90P IXYS, IXFH18N90P Datasheet - Page 5

• Manufacturer Part Number: IXFH18N90P
• Description: MOSFET N-CH TO-247
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFH18N90P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 6V @ 1mA
• Gate Charge (qg) @ Vgs: 97nC @ 10V
• Input Capacitance (ciss) @ Vds: 5230pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 600 mOhms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 900 V
• Continuous Drain Current: 18 A
• Power Dissipation: 540 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 97 nC
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 900
• Id(cont), Tc=25°c, (a): 18
• Rds(on), Max, Tj=25°c, (?): 0.6
• Ciss, Typ, (pf): 5230
• Qg, Typ, (nc): 97
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 540
• Rthjc, Max, (ºc/w): 0.23
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
TO-247 (IXFH) Outline
TO-268 (IXFT) Outline
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
1
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
2
3 - Source
.4
3
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
∅ P
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
L1
2X e
PLUS220SMD (IXFV_S) Outline
PLUS220 (IXFV) Outline
A
A1
A2
b
c
D
D1
E
E1
e
L
L1
L2
L3
E1
E
IXFH18N90P IXFV18N90P
IXFT18N90P IXFV18N90PS
3X b
L
D
Terminals: 1-Gate 2-Drain
L2
L3
c
A2
A1
A
E1
D1
IXYS REF: F_18N90P(76)9-11-09-A