FDN352AP Fairchild Semiconductor, FDN352AP Datasheet - Page 3
![MOSFET P-CH 30V 1.3A SSOT-3](/photos/5/45/54562/261-supersot-3_sml.jpg)
FDN352AP
Manufacturer Part Number
FDN352AP
Description
MOSFET P-CH 30V 1.3A SSOT-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN352AP.pdf
(5 pages)
Specifications of FDN352AP
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 1.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.3A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
1.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
150pF @ 15V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.18 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
2 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
1.3 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN352AP
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDN352AP
Manufacturer:
FSC
Quantity:
69 000
Company:
Part Number:
FDN352AP
Manufacturer:
Intersil
Quantity:
130
Part Number:
FDN352AP
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDN352AP-NL
Manufacturer:
ON/安森美
Quantity:
20 000
FDN352AP Rev. C1
Typical Characteristics
10
10
8
6
4
2
0
8
6
4
2
0
0
1.4
1.2
0.8
0.6
1
Figure 3. On-Resistance Variation with
1
V
Figure 1. On-Region Characteristics.
-50
GS
Figure 5. Transfer Characteristics.
V
= -10V
DS
V
I
D
GS
= -5V
2
= -0.9A
-25
= -10V
1
-V
-V
DS
GS
, DRAIN TO SOURCE VOLTAGE (V)
T
3
, GATE TO SOURCE VOLTAGE (V)
0
J
, JUNCTION TEMPERATURE (
Temperature.
-6.0V
2
25
T
A
4
= -55
-4.5V
50
o
C
5
3
-4.0V
25
75
o
C
6
o
C)
100
-3.5V
125
4
o
C
125
7
-3.0V
150
5
8
3
Figure 6. Body Diode Forward Voltage Variation
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0001
0.001
0.01
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
2
0.1
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
0.0
0
T
A
V
Drain Current and Gate Voltage.
= 25
V
GS
GS
= -4.0V
= 0V
o
C
-4.5V
0.2
Gate-to-Source Voltage.
-V
SD
-V
2
4
, BODY DIODE FORWARD VOLTAGE (V)
GS
-5.0V
T
A
, GATE TO SOURCE VOLTAGE (V)
= 125
0.4
T
A
-I
= 125
D
, DRAIN CURRENT (A)
o
C
-6.0V
4
o
0.6
C
25
6
o
C
-7.0V
0.8
6
-55
o
C
-8.0V
1.0
8
www.fairchildsemi.com
8
I
D
1.2
= -0.45A
-10V
1.4
10
10