FDS6679AZ Fairchild Semiconductor, FDS6679AZ Datasheet - Page 5
![MOSFET P-CH 30V 13A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6679AZ
Manufacturer Part Number
FDS6679AZ
Description
MOSFET P-CH 30V 13A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6679AZ.pdf
(6 pages)
Specifications of FDS6679AZ
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.3 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
96nC @ 10V
Input Capacitance (ciss) @ Vds
3845pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0093 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
13 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6679AZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS6679AZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6679AZ-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDS6679AZ Rev. B2
Typical Characteristics
10
10
10
10
10
10
10
0.5
10
1
1
-1
-2
-3
-4
10
2
4
3
2
10
-4
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
SINGLE PULSE
R
T
A
θ
JA
0.2
0.1
0.05
0.02
0.01
= 25
Figure 14.
= 125
o
C
10
10
o
C/W
-3
-3
Figure 13.
SINGLE PULSE
R
θ
JA
Junction-to-Ambient Transient Thermal Response Curve
= 125
T
J
10
o
10
C/W
= 25°C unless otherwise noted
-2
-2
Single Pulse Maximum Power Dissipation
t, RECTANGULAR PULSE DURATION (sec)
t, PULSE WIDTH (sec)
10
10
-1
-1
5
1
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
10
J
= P
DM
x Z
θJA
P
V
DM
1
GS
/t
x R
2
10
= -10 V
10
θJA
2
2
t
1
+ T
www.fairchildsemi.com
t
2
A
10
10
3
3