FDS6575 Fairchild Semiconductor, FDS6575 Datasheet - Page 2
![MOSFET P-CH 20V 10A SO-8](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6575
Manufacturer Part Number
FDS6575
Description
MOSFET P-CH 20V 10A SO-8
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6575.pdf
(5 pages)
Specifications of FDS6575
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 10A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 4.5V
Input Capacitance (ciss) @ Vds
4951pF @ 10V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.013 Ohms
Forward Transconductance Gfs (max / Min)
57 S
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
10 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6575
FDS6575TR
FDS6575TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6575
Manufacturer:
FSC
Quantity:
1 200
Part Number:
FDS6575
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6575-NL
Manufacturer:
RENESAS
Quantity:
2 460
Company:
Part Number:
FDS6575-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6575-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6575_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
DSS
GSSF
GSSR
D(on)
S
the drain pins. R
d(on)
r
d(off)
f
FS
BV
V
DS(on)
iss
oss
rss
GS(th)
g
gs
gd
SD
JA
DSS
GS(th)
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
a) 50 °C/W when
mounted on a 1in
pad of 2 oz copper
Parameter
(Note 2)
2
(Note 2)
CA
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
D
D
A
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
b) 105 °C/W when
= –250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
= 25°C unless otherwise noted
= –4.5 V, I
mounted on a .04 in
pad of 2 oz copper
= 0 V, I
= –16 V, V
= 8 V,
= –8 V,
= V
= –4.5 V,
= –2.5 V,
= –4.5 V,
= –5 V,
= –10 V,
= –10V,
= –4.5 V,
= –10 V,
= –4.5 V
= 0 V, I
Test Conditions
GS
, I
D
D
= –250 A
S
= –250 A
D
= –2.1 A
V
V
=–10A, T
I
I
V
V
I
GS
DS
DS
D
D
D
I
I
R
D
D
2
DS
= –10 A
= –9 A
GS
GEN
= –10 A,
= –10 A
= –1 A,
= 0 V
= 0 V
= 0 V
= –5 V
= 0 V,
= 6
J
=125 C
(Note 2)
Min
–0.4
–20
–50
c) 125 °C/W when mounted on a
minimum pad.
4951
Typ
–0.6
–0.6
–13
884
451
196
8.5
11
11
57
16
78
53
12
3
9
6
Max Units
–100
–1.5
–2.1
–1.2
100
314
125
–1
13
17
20
29
18
74
FDS6575 Rev F(W)
mV/ C
mV/ C
m
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A