FDV302P Fairchild Semiconductor, FDV302P Datasheet - Page 3
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FDV302P
Manufacturer Part Number
FDV302P
Description
MOSFET P-CH 25V 120MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDV302P.pdf
(4 pages)
Specifications of FDV302P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 Ohm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
120mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
0.31nC @ 4.5V
Input Capacitance (ciss) @ Vds
11pF @ 10V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
10 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
0.135 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
0.12 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDV302PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDV302P
Manufacturer:
FAIRC
Quantity:
3 000
Company:
Part Number:
FDV302P
Manufacturer:
FSC
Quantity:
3 417
Part Number:
FDV302P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDV302P-NL
Manufacturer:
FAIRCHILD
Quantity:
150 000
Part Number:
FDV302P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDV302P_NL
Manufacturer:
FAIRCHIL
Quantity:
107 994
Company:
Part Number:
FDV302P_NL
Manufacturer:
BROADCOM
Quantity:
308
Typical Electrical Characteristics
0.08
0.06
0.04
0.02
0
0.15
0.05
0.5
1.6
1.4
1.2
0.8
0.6
0.2
0.1
1
Figure 3. On-Resistance Variation
0
-50
0
Figure 5. Transfer Characteristics.
V
Figure 1. On-Region Characteristics.
DS
V
I = -0.05A
= -5V
V
D
GS
-25
GS
1
-V
= -2.7V
with Temperature.
GS
= -5.0V
, GATE TO SOURCE VOLTAGE (V)
-4.5
-V
T , JUNCTION TEMPERATURE (°C)
1
0
DS
J
, DRAIN-SOURCE VOLTAGE (V)
1.5
25
T = -55°C
-4.0
A
-3.5
50
2
2
-3.0
25°C
75
-2.7
125°C
2.5
100
-2.5
3
-2.0
125
3
150
4
25
20
15
10
5
0
0.0001
0
0.001
1.5
0.5
0.01
Figure 4. On Resistance Variation with
0.5
0.1
2
1
T = 25°C
Figure 6. Body Diode Forward Voltage
0
0.2
A
V
Variation with Source Current and
Figure 2. On-Resistance Variation with
1
GS
V
Gate-To- Source Voltage.
GS
= 0V
Drain Current and Gate Voltage.
= -2.0 V
-V
-V
0.4
SD
2
GS
0.05
, BODY DIODE FORWARD VOLTAGE (V)
,GATE TO SOURCE VOLTAGE (V)
125 °C
-I , DRAIN CURRENT (A)
D
3
0.6
T = 125°C
-2.5
J
4
0.1
Temperature.
25°C
-2.7
0.8
-55°C
5
-3.0
0.15
6
-4.0
I = -0.05A
1
D
FDV302P REV. F
-3.5
7
-4.5
1.2
0.2
8