FDC608PZ Fairchild Semiconductor, FDC608PZ Datasheet - Page 3

• Manufacturer Part Number: FDC608PZ
• Description: MOSFET P-CH 20V 5.8A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC608PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1330pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5.8A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC608PZTR

Typical Characteristics
20
15
10
20
15
10
5
0
5
0
1.5
1.3
1.1
0.9
0.7
Figure 3. On-Resistance Variation with
0
0
Figure 1. On-Region Characteristics.
-50
V
V
DS
Figure 5. Transfer Characteristics.
GS
= -5V
V
= -4.5V
I
-3.5V
D
GS
-25
= -5.8A
0.5
0.5
= -4.5V
-V
-V
DS
GS
T
, DRAIN TO SOURCE VOLTAGE (V)
0
J
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
T
Temperature.
A
-3.0V
1
1
= -55
25
-2.5V
o
C
1.5
1.5
50
75
25
2
o
2
C
125
-2.0V
100
o
o
C)
C
2.5
2.5
125
150
3
3
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.08
0.06
0.04
0.02
0.01
0.1
100
2.6
2.2
1.8
1.4
0.6
0.1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
10
with Source Current and Temperature.
1
1
0
0
0
Drain Current and Gate Voltage.
T
V
A
GS
V
= 25
T
GS
= 0V
A
-2.5V
= -2.0V
= 125
Gate-to-Source Voltage.
0.2
o
C
-V
2
SD
-V
o
C
, BODY DIODE FORWARD VOLTAGE (V)
GS
5
, GATE TO SOURCE VOLTAGE (V)
0.4
-3.0V
-I
D
T
25
, DRAIN CURRENT (A)
A
o
= 125
4
C
0.6
o
C
10
-55
-3.5V
o
C
0.8
6
-4.0V
1
15
FDC608PZ Rev B (W)
8
I
D
1.2
= -2.9A
-4.5V
10
20
1.4