FDC608PZ Fairchild Semiconductor, FDC608PZ Datasheet - Page 3
![MOSFET P-CH 20V 5.8A SSOT-6](/photos/5/42/54216/261-supersot-6_sml.jpg)
FDC608PZ
Manufacturer Part Number
FDC608PZ
Description
MOSFET P-CH 20V 5.8A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC608PZ.pdf
(5 pages)
Specifications of FDC608PZ
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 5.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 4.5V
Input Capacitance (ciss) @ Vds
1330pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.03 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
22 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
5.8 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
5.8A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC608PZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC608PZ
Manufacturer:
Fairchild Semiconductor
Quantity:
116 226
Company:
Part Number:
FDC608PZ
Manufacturer:
FAIRCHILD
Quantity:
3 477
Part Number:
FDC608PZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
20
15
10
20
15
10
5
0
5
0
1.5
1.3
1.1
0.9
0.7
Figure 3. On-Resistance Variation with
0
0
Figure 1. On-Region Characteristics.
-50
V
V
DS
Figure 5. Transfer Characteristics.
GS
= -5V
V
= -4.5V
I
-3.5V
D
GS
-25
= -5.8A
0.5
0.5
= -4.5V
-V
-V
DS
GS
T
, DRAIN TO SOURCE VOLTAGE (V)
0
J
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
T
Temperature.
A
-3.0V
1
1
= -55
25
-2.5V
o
C
1.5
1.5
50
75
25
2
o
2
C
125
-2.0V
100
o
o
C)
C
2.5
2.5
125
150
3
3
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.08
0.06
0.04
0.02
0.01
0.1
100
2.6
2.2
1.8
1.4
0.6
0.1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
10
with Source Current and Temperature.
1
1
0
0
0
Drain Current and Gate Voltage.
T
V
A
GS
V
= 25
T
GS
= 0V
A
-2.5V
= -2.0V
= 125
Gate-to-Source Voltage.
0.2
o
C
-V
2
SD
-V
o
C
, BODY DIODE FORWARD VOLTAGE (V)
GS
5
, GATE TO SOURCE VOLTAGE (V)
0.4
-3.0V
-I
D
T
25
, DRAIN CURRENT (A)
A
o
= 125
4
C
0.6
o
C
10
-55
-3.5V
o
C
0.8
6
-4.0V
1
15
FDC608PZ Rev B (W)
8
I
D
1.2
= -2.9A
-4.5V
10
20
1.4