FDC608PZ Fairchild Semiconductor, FDC608PZ Datasheet - Page 4

• Manufacturer Part Number: FDC608PZ
• Description: MOSFET P-CH 20V 5.8A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC608PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1330pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5.8A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC608PZTR

Typical Characteristics
0.01
100
0.1
10
10
Figure 9. Maximum Safe Operating Area.
8
6
4
2
0
1
0.001
Figure 7. Gate Charge Characteristics.
0.1
0
0.01
0.1
0.00001
SINGLE PULSE
R
1
R
I
θ JA
D
V
DS(ON)
T
= -5.8A
GS
A
= 156
= 25
= -4.5V
D = 0.5
LIMIT
0.2
o
o
C
C/W
0.1
0.05
0.02
10
-V
0.01
DS
SINGLE PULSE
0.0001
, DRAIN-SOURCE VOLTAGE (V)
DC
Q
1
g
, GATE CHARGE (nC)
1s
100ms
V
DS
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
20
= -5V
10ms
Figure 11. Transient Thermal Response Curve.
0.001
1ms
-10V
10
30
100 µ s
0.01
-15V
40
100
t
1
, TIME (sec)
0.1
2500
2000
1500
1000
10
500
8
6
4
2
0
0.01
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
C
rss
2
-V
0.1
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
oss
10
t
4
1
, TIME (sec)
P(pk)
Duty Cycle, D = t
T
R
1
J
R
θJA
- T
θJA
(t) = r(t) * R
A
t
= 156
100
1
= P * R
6
t
2
C
iss
o
C/W
θJA
θJA
1
SINGLE PULSE
10
R
(t)
/ t
θ JA
2
T
FDC608PZ Rev B (W)
A
8
= 156°C/W
= 25°C
f = 1 MHz
V
1000
GS
= 0 V
100
10