FDFMA2P857 Fairchild Semiconductor, FDFMA2P857 Datasheet - Page 2

• Manufacturer Part Number: FDFMA2P857
• Description: MOSFET P-CH 20V 3A MICROFET2X2
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMA2P857

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 435pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFMA2P857TR

FDFMA2P857 Rev.B1
Dynamic Characteristics
Electrical Characteristics
Off Characteristics
On Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Schottky Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
I
V
t
Q
I
I
V
V
ΔV
DSS
GSS
d(on)
r
d(off)
f
S
rr
R
R
DS(on)
FS
GS(th)
SD
F
F
iss
oss
rss
ΔT
ΔT
g(TOT)
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Leakage
Reverse Leakage
Forward Voltage
Forward Voltage
Parameter
T
J
= 25°C unless otherwise noted
V
I
V
V
V
V
V
f = 1.0MHz
V
I
V
V
V
V
V
I
I
V
V
F
V
V
I
I
D
D
D
GS
F
F
DS
DD
GS
DS
GS
GS
GS
GS
GS
GS
DS
DS
GS
= –3.0A, di/dt = 100A/μs
R
R
= –250μA, referenced to 25°C
= –250μA, V
= –250μA, referenced to 25°C
= 100mA
= 1A
= 10V
= 20V
= –10V I
= 0V, I
= –10V, V
= –10V, I
= –4.5V, R
= –4.5V
= V
= –4.5V, I
= –2.5V, I
= –1.8V, I
= –4.5V, I
= –5V, I
= –16V, V
= ±8V, V
DS
2
Test Conditions
, I
S
= –1.1A
D
D
D
D
DS
GS
GS
D
D
D
D
= –250μA
GS
= –1A
GEN
= –3.0A
= –3.0A
= –3.0A, T
= –3.0A
= –2.5A
= –1.0A
= 0V
= 0V,
= 0V
= 0V
= 6Ω
T
T
T
T
T
T
T
T
T
T
T
T
(Note 2)
J
J
J
J
J
J
J
J
J
J
J
J
= 25°C
= 85°C
= 125°C
= 25°C
= 85°C
= 125°C
= 25°C
= 85°C
= 125°C
= 25°C
= 85°C
= 125°C
J
= 125°C
–0.4
Min
–20
–0.8
–0.7
435
0.05
0.09
0.37
0.29
0.23
0.46
0.43
120
172
118
Typ
–12
80
45
0.8
0.9
17
0.5
0.6
1.1
0.9
0.5
90
11
15
6
2
7
9
6
4
±100
Max
–1.3
–1.1
–1.2
0.40
0.35
0.29
0.54
0.51
0.48
120
160
240
160
4.5
1.0
8.4
8.0
1.6
10
–1
18
19
27
12
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6
mV/°C
mV/°C
Units
mΩ
mA
mA
mA
mA
nC
pF
pF
pF
nC
nC
nC
μA
μA
μA
nA
ns
ns
ns
ns
ns
A
V
V
S
V
V
V
V
V
V
V