FQPF4N25 Fairchild Semiconductor, FQPF4N25 Datasheet - Page 98
FQPF4N25
Manufacturer Part Number
FQPF4N25
Description
MOSFET N-CH 250V 2.8A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF4N25.pdf
(214 pages)
Specifications of FQPF4N25
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
32W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.8 A
Power Dissipation
32 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
22 ns
Minimum Operating Temperature
- 55 C
Rise Time
45 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF4N25
Manufacturer:
FAIRCHILD
Quantity:
12 500
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Small Signal Transistors – Darlington Transistors (Continued)
KSP14
MPSA13
MPSA14
BC517
KSP25
2N5307
2N5308
2N6427
2N6426
BSR50
KSP26
KSP27
MPSA27
MPSA28
MPSA29
2N7051
2N7052
TO-92 PNP Configuration
MPSA77
KSP62
KSP63
KSP64
BC516
MPSA63
MPSA64
MPSA65
KSP75
KSP76
KSP77
Products
V
CEO
100
100
100
30
30
30
40
40
40
40
40
40
45
50
60
60
80
20
30
30
30
30
30
30
40
50
60
–
(V)
V
CBO
100
100
100
30
30
30
30
40
40
40
40
40
60
50
60
60
80
60
20
30
30
40
30
30
30
40
50
60
(V)
V
EBO
10
10
10
10
10
12
12
12
12
10
10
10
12
12
12
12
10
10
10
10
10
10
10
10
10
10
10
5
(V)
Max (A)
0.5
1.2
1.2
0.5
1.2
1.2
1.2
1.2
0.5
0.5
0.8
0.8
0.8
1.5
1.5
1.2
0.5
0.5
0.5
1.2
1.2
1.2
0.5
0.5
0.5
I
–
–
1
C
20000
10000
20000
30000
10000
20000
30000
10000
10000
10000
10000
10000
10000
20000
10000
20000
30000
10000
20000
20000
10000
10000
10000
7000
1000
1000
2000
1000
Min
2-93
Discrete Power Products –
200000
300000
20000
70000
20000
20000
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@V
10
CE
5
5
5
2
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
5
5
5
5
5
5
(V) @I
1000
1000
C
100
100
100
100
100
100
150
100
100
100
100
100
100
100
100
100
100
100
100
100
100
20
10
20
2
2
(mA)
Bipolar Transistors and JFETs
Max (V)
1.5
1.5
1.5
1.5
1.4
1.4
1.5
1.5
1.3
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1
1
1
@I
V
CE (sat)
C
100
100
100
100
100
200
200
500
500
500
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
10
(mA) @I
0.01
B
0.1
0.1
0.1
0.1
0.2
0.2
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
10
10
(mA)
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