IRFR210BTM_FP001 Fairchild Semiconductor, IRFR210BTM_FP001 Datasheet - Page 4

• Manufacturer Part Number: IRFR210BTM_FP001
• Description: MOSFET N-CH 200V 2.7A DPAK
• Manufacturer: Fairchild Semiconductor

Specifications of IRFR210BTM_FP001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 1.35A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 9.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 225pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohms
• Forward Transconductance Gfs (max / Min): 2.25 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
1.2
1.1
1.0
0.9
0.8
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
1
0
Figure 7. Breakdown Voltage Variation
10
0
-50
T
V
vs Temperature
J
, Junction Temperature [
DS
0
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
※ Notes :
1 0
1 0
10
1. T
2. T
3. Single Pulse
1
- 1
C
J
0
1 0
= 150
= 25
- 5
o
0 . 0 2
0 . 0 1
C
D = 0 .5
0 . 0 5
o
DS(on)
C
50
0 . 1
0 . 2
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
1 ms
o
C]
s in g le p u ls e
- 4
※ Notes :
10
1. V
2. I
100 s
2
D
t
G S
= 250 μ A
1
= 0 V
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
150
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
- 1
P
θ J C
J M
DM
-50
- T
(t) = 4 .9 ℃ /W M a x .
50
C
= P
vs Case Temperature
T
D M
t
vs Temperature
J
T
1
, Junction Temperature [
C
t
1 0
0
* Z
, Case Temperature [ ℃ ]
2
1
0
θ J C
/t
75
2
(t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 1.65 A
= 10 V
Rev. B, November 2001
200
150