IRFR210BTM_FP001 Fairchild Semiconductor, IRFR210BTM_FP001 Datasheet - Page 8

• Manufacturer Part Number: IRFR210BTM_FP001
• Description: MOSFET N-CH 200V 2.7A DPAK
• Manufacturer: Fairchild Semiconductor

Specifications of IRFR210BTM_FP001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 1.35A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 9.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 225pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohms
• Forward Transconductance Gfs (max / Min): 2.25 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Mechanical Dimensions
I - PAK
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001