FDG330P Fairchild Semiconductor, FDG330P Datasheet - Page 4
![MOSFET P-CH 12V 2A SC70-6](/photos/5/42/54217/261-sc-70-6_sml.jpg)
FDG330P
Manufacturer Part Number
FDG330P
Description
MOSFET P-CH 12V 2A SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDG330P.pdf
(5 pages)
Specifications of FDG330P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 4.5V
Input Capacitance (ciss) @ Vds
477pF @ 6V
Power - Max
480mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.11 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
6.8 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDG330P
Manufacturer:
IR
Quantity:
25 562
Part Number:
FDG330P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
0.01
Figure 9. Maximum Safe Operating Area.
100
0.1
0.001
10
Figure 7. Gate Charge Characteristics.
0.01
6
5
4
3
2
1
0
1
0.1
0.1
0.00001
0
1
R
SINGLE PULSE
R
DS(ON)
θJA
V
T
I
GS
D
A
= 260
= -2A
= 25
= -4.5V
D = 0.5
LIMIT
0.2
o
o
0.1
0.05
C/W
C
0.02
0.01
-V
2
DS
SINGLE PULSE
0.0001
, DRAIN-SOURCE VOLTAGE (V)
Q
1
DC
g
, GATE CHARGE (nC)
1s
100ms
4
Figure 11. Transient Thermal Response Curve.
V
10ms
DS
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
0.001
= -4V
1ms
10
-8V
100 µ s
6
-6V
0.01
100
8
t
1
, TIME (sec)
0.1
10
800
700
600
500
400
300
200
100
8
6
4
2
0
0.01
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
2
1
-V
Power Dissipation.
0.1
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
C
C
C
t
OSS
RSS
1
ISS
, TIME (sec)
10
6
1
P(pk)
Duty Cycle, D = t
T
R
J
R
θJA
- T
θJA
(t) = r(t) * R
8
A
= 260
t
1
100
= P * R
t
2
SINGLE PULSE
R
10
θJA
T
o
A
C/W
FDG330P Rev D (W)
= 260°C/W
10
= 25°C
θJA
1
f = 1 MHz
V
θJA
(t)
/ t
GS
2
= 0 V
1000
12
100