FQD6N40CTM Fairchild Semiconductor, FQD6N40CTM Datasheet - Page 4

• Manufacturer Part Number: FQD6N40CTM
• Description: MOSFET N-CH 400V 4.5A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD6N40CTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 2.25A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 625pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.7 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 38 ns
• Rise Time: 65 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Internationa
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
10
-100
Figure 9. Maximum Safe Operating Area
-1
-2
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs Temperature
J
DS
, Junction Temperature [
10
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
1
1 0
1 0
※ Notes :
1. T
2. T
3. Single Pulse
- 1
0
1 0
C
J
= 25
= 150
- 5
0 . 0 2
0 . 0 1
D = 0 .5
0 . 0 5
50
DS(on)
o
0 . 1
C
o
0 . 2
C
DC
10 ms
Figure 11. Transient Thermal Response Curve
(Continued)
100
10
1 ms
1 0
2
o
C]
s in g le p u ls e
- 4
100 s
※ Notes :
1. V
2. I
D
t
G S
= 250 μ A
1
150
= 0 V
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
10 s
1 0
10
- 3
200
3
1 0
- 2
5
4
3
2
1
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
-100
Figure 10. Maximum Drain Current
※ N o te s :
Figure 8. On-Resistance Variation
1 0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
- 1
P
θ J C
J M
DM
-50
50
- T
(t) = 2 .6 ℃ /W M a x .
C
vs Case Temperature
= P
T
T
D M
C
t
vs Temperature
J
1
, Case Temperature [ ℃ ]
, Junction Temperature [
t
1 0
0
* Z
2
75
1
0
θ J C
/t
2
(t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 2.25 A
= 10 V
Rev. A1, October 2008
150
200