FDS6694 Fairchild Semiconductor, FDS6694 Datasheet - Page 3

MOSFET N-CH 30V 12A 8-SOIC

FDS6694

Manufacturer Part Number
FDS6694
Description
MOSFET N-CH 30V 12A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS6694

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 5V
Input Capacitance (ciss) @ Vds
1293pF @ 15V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0091 Ohms
Forward Transconductance Gfs (max / Min)
50 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Typical Characteristics
50
40
30
20
10
70
60
50
40
30
20
10
0
0
1.5
0
Figure 3. On-Resistance Variation with
1.6
1.4
1.2
0.8
0.6
Figure 1. On-Region Characteristics.
1
V
V
-50
Figure 5. Transfer Characteristics.
DS
GS
6.0V
= 5V
= 10V
V
I
GS
D
-25
= 12A
2
= 10V
V
0.5
4.0V
V
GS
DS
0
, GATE TO SOURCE VOLTAGE (V)
T
, DRAIN-SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
Temperature.
2.5
4.5V
25
50
1
3
3.5.V
T
75
A
= -55
3.5
100
o
C
125
C
1.5
o
C)
3.0V
125
o
25
4
o
C
150
4.5
175
2
Figure 6. Body Diode Forward Voltage Variation
0.028
0.024
0.016
0.012
0.008
0.004
0.02
0.0001
0.001
0.01
2.2
1.8
1.6
1.4
1.2
0.8
100
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
0.1
10
2
1
2
1
0
0
Drain Current and Gate Voltage.
V
GS
V
= 0V
GS
Gate-to-Source Voltage.
= 3.5V
0.2
V
10
SD
V
GS
, BODY DIODE FORWARD VOLTAGE (V)
4
T
, GATE TO SOURCE VOLTAGE (V)
A
T
4.0V
= 25
A
I
0.4
D
= 125
, DRAIN CURRENT (A)
o
C
20
4.5V
o
C
6
0.6
5.0V
25
T
A
o
= 125
C
30
0.8
6.0V
o
C
-55
8
o
C
40
FDS6694 Rev.E(W)
1
I
D
10V
= 6A
1.2
50
10

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