FDS6694 Fairchild Semiconductor, FDS6694 Datasheet - Page 4

• Manufacturer Part Number: FDS6694
• Description: MOSFET N-CH 30V 12A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6694

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 5V
• Input Capacitance (ciss) @ Vds: 1293pF @ 15V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0091 Ohms
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
10
0.01
100
8
6
4
2
0
0.1
10
Figure 9. Maximum Safe Operating Area.
1
0
Figure 7. Gate Charge Characteristics.
0.01
0.001
I
0.01
D
R
SINGLE PULSE
R
0.1
= 12A
DS(ON)
JA
V
0.0001
T
1
GS
A
= 125
= 25
LIMIT
= 10V
5
o
o
C
C/W
D = 0.5
0.1
V
DS
0.2
0.1
, DRAIN-SOURCE VOLTAGE (V)
0.05
0.02
Q
g
0.01
, GATE CHARGE (nC)
10
0.001
S I N G L E P U L S E
1
DC
Figure 11. Transient Thermal Response Curve.
10s
15
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1s
100ms
V
DS
10ms
= 5V
0.01
10
1ms
20
100µs
15V
10V
100
25
0.1
t
1
, TIM E ( s e c )
2000
1600
1200
50
40
30
20
10
800
400
0
0.01
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
RSS
1
5
C
0.1
OSS
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1 0
t
1
, TIME (sec)
C
ISS
1
15
P(pk)
Duty Cycle, D = t
T
R
R
J
20
- T
JA
1 0 0
JA
(t) = r(t) *R
A
= 125 °C/W
t
SINGLE PULSE
R
10
1
= P * R
t
2
JA
T
A
= 125°C/W
= 25°C
FDS6694 Rev.E(W)
25
V
f = 1MHz
JA
GS
1
JA
(t)
/ t
= 0 V
2
100
1 0 0 0
30