FQU2N90TU_WS Fairchild Semiconductor, FQU2N90TU_WS Datasheet - Page 125
FQU2N90TU_WS
Manufacturer Part Number
FQU2N90TU_WS
Description
MOSFET N-CH 900V 1.7A IPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.SFU9220TU_F080.pdf
(214 pages)
Specifications of FQU2N90TU_WS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.2 Ohm @ 850mA, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
500pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
- Current page: 125 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
JFETs (Continued)
BF244C
BF245C
2N5639
PN4391
2N5638
BF246A
J113
J112
J111
J201
PF5102
PN4117
PN4117A
PF5103
PN4118
J202
PN4093
PN4119
PN4092
U1898
PN4091
U1897
KSK30
TO-92 P-Channel
2N3820
J270
J177
J176
J271
P1087
J175
P1086
J174
2N5460
Products
BV
(V)
30
30
30
30
30
30
35
35
35
40
40
40
40
40
40
40
40
40
40
40
40
40
50
20
30
30
30
30
30
30
30
30
40
GDS
Dissipation
Power
(mW)
350
350
625
625
625
625
625
625
625
625
625
350
350
625
350
625
625
350
625
625
625
625
100
350
350
350
350
350
350
350
350
350
350
P
D
Min (V)
0.75
0.5
0.5
0.6
0.5
0.3
0.7
0.6
0.6
1.2
0.8
0.4
0.5
0.8
1.5
–
–
3
1
1
2
5
–
–
3
–
5
4
1
2
2
5
1
Typ (V) Max (V) @ I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
14.5
GS
1.5
1.6
1.8
1.8
2.7
2.5
4.5
10
12
10
10
10
10
10
8
8
8
3
5
3
4
5
6
7
7
5
8
2
4
5
6
6
(off)
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
D
0.1
–
–
1
1
1
1
1
1
(µA) @ V
2-120
Discrete Power Products –
15
15
20
15
20
15
10
10
15
10
20
20
10
20
20
20
20
10
10
15
15
15
15
15
15
15
15
15
DS
–
–
5
5
5
(V) Min (mA) Max (mA) @V
0.03
0.03
0.08
0.2
0.9
0.2
0.3
0.3
1.5
12
12
25
50
50
30
20
10
15
15
30
30
10
20
2
5
4
8
2
2
6
5
7
1
0.09
0.09
0.24
150
100
I
4.5
0.6
6.5
25
25
80
20
40
15
15
20
25
50
60
DSS
–
–
–
–
–
–
–
–
–
–
–
–
1
5
DS
15
15
20
20
20
15
15
15
15
20
15
10
10
15
10
20
20
10
20
20
20
20
10
10
15
15
15
15
20
15
20
15
15
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
0.07
0.07
0.08
3.5
7.5
0.1
0.8
–
3
–
–
–
8
–
–
–
–
–
–
–
–
–
–
–
6
–
–
8
–
–
–
–
1
GFS
0.21
0.21
0.25
0.33
6.5
15
18
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5
4
100
300
150
125
R
(Ω)
250
60
30
30
50
30
80
50
50
30
30
75
85
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
DS
I
0.0001
0.0002
0.0002
0.0002
0.001
0.001
0.001
0.001
0.001
D
(µA)
0.01
0.01
(off)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Related parts for FQU2N90TU_WS
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: