FQU2N90TU_WS Fairchild Semiconductor, FQU2N90TU_WS Datasheet - Page 207
FQU2N90TU_WS
Manufacturer Part Number
FQU2N90TU_WS
Description
MOSFET N-CH 900V 1.7A IPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.SFU9220TU_F080.pdf
(214 pages)
Specifications of FQU2N90TU_WS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.2 Ohm @ 850mA, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
500pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Part Number
Manufacturer
Quantity
Price
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Discrete
Discrete IGBT (I)
F G A 25 N 120 A N
(Continued)
D
P: TO-220
PF: TO-220F
A: TO-3P
AF: TO-3PF
L: TO-264
Built-in FRD
Technology: N (NPT), NT (NPT + Trench)
Speed: A (100ns), B (200ns), C (500ns)
Voltage Rating (x10)
N: N-Channel
Current Rating
Package Type
IGBT
Fairchild
8-14
D: D-PAK
U: I-PAK
B: D
I: I
S: 8-SOP
2
-PAK
2
-PAK
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