FQU2N90TU_WS Fairchild Semiconductor, FQU2N90TU_WS Datasheet - Page 75
FQU2N90TU_WS
Manufacturer Part Number
FQU2N90TU_WS
Description
MOSFET N-CH 900V 1.7A IPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.SFU9220TU_F080.pdf
(214 pages)
Specifications of FQU2N90TU_WS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.2 Ohm @ 850mA, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
500pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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TO-3PF (Continued)
FQAF11N90C
FQAF5N90
FQAF9P25
SFF9244
SFF9250L
FQAF12P20
SFF9240
FQAF22P10
FQAF17P10
SFF9140
FQAF47P06
TO-3PF P-Channel
Products
Min. (V)
BV
-250
-250
-200
-200
-200
-100
-100
-100
900
900
-60
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.125
0.026
10V
0.62
0.47
0.19
1.1
2.3
0.8
0.5
0.2
–
R
DS(ON)
0.23@5V
4.5V
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-70
2.5V
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
60
31
29
45
90
31
46
40
30
43
84
=5V
I
D
12.6
11.5
16.6
12.4
7.2
4.1
7.1
7.6
13
38
6
(A)
MOSFETs
P
D
120
100
90
70
60
90
70
60
70
56
80
(W)
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