SI2323DS-T1 Vishay, SI2323DS-T1 Datasheet - Page 4

• Manufacturer Part Number: SI2323DS-T1
• Description: MOSFET P-CH 20V SOT23
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2323DS-T1

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 10V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Si2323DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.1
-0.2
0.4
0.3
0.2
0.1
0.0
0.1
20
10
1
-50
0.0
-25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
J
Threshold Voltage
T
I
= 150_C
D
J
0.4
= 140 mA
- Temperature (_C)
25
50
0.6
75
0.8
T
100
0.01
J
100
0.1
10
= 25_C
1
0.1
1.0
125
Limited
r
I
DS(on)
D(on)
Single Pulse
T
150
1.2
A
V
= 25_C
New Product
Limited
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
1
BV
DSS
Limited
0.15
0.12
0.09
0.06
0.03
0.00
I
10
DM
12
10
8
6
4
2
0
0.01
Limited
0
On-Resistance vs. Gate-to-Source Voltage
I
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
D
= 2 A
V
0.1
1
GS
100
- Gate-to-Source Voltage (V)
Single Pulse Power
Time (sec)
2
I
D
1
= 4.7 A
3
S-22121—Rev. B, 25-Nov-02
10
Document Number: 72024
T
A
= 25_C
4
100
600
5