SI7120DN-T1-E3 Vishay, SI7120DN-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7120DN-T1-E3
• Description: MOSFET N-CH 60V 6.3A 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7120DN-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6.3A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7120DN-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72771
S-80581-Rev. E, 17-Mar-08
0.10
0.08
0.06
0.04
0.02
0.00
10
40
10
8
6
4
2
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
5
D
DS
On-Resistance vs. Drain Current
0.2
= 10 A
= 10 V
6
V
10
V
SD
GS
Q
- Source-to-Drain Voltage (V)
g
T
0.4
= 4.5 V
J
I
- Total Gate Charge (nC)
D
15
= 150 °C
Gate Charge
- Drain Current (A)
12
20
0.6
18
25
0.8
V
30
GS
T
J
24
= 10 V
= 25 °C
1.0
35
40
30
1.2
3000
2500
2000
1500
1000
0.10
0.08
0.06
0.04
0.02
0.00
500
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0.0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
- 25
V
I
D
oss
GS
10
= 10 A
2.0
V
= 10 V
GS
V
T
DS
0
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
20
C
rss
Capacitance
25
4.0
C
50
30
Vishay Siliconix
iss
6.0
75
Si7120DN
I
D
40
= 10 A
www.vishay.com
100
8.0
50
125
10.0
150
60
3