IRFPC40 Vishay, IRFPC40 Datasheet - Page 6
![MOSFET N-CH 600V 6.8A TO-247AC](/photos/5/40/54088/to-247ac_sml.jpg)
IRFPC40
Manufacturer Part Number
IRFPC40
Description
MOSFET N-CH 600V 6.8A TO-247AC
Manufacturer
Vishay
Datasheet
1.IRFPC40.pdf
(8 pages)
Specifications of IRFPC40
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 4.1A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
6.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.8 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFPC40
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFPC40
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFPC40
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFPC40PBF
Manufacturer:
IR
Quantity:
20 000
IRFPC40, SiHFPC40
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
10 V
G
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
12 V
DS
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S09-0005-Rev. A, 19-Jan-09
Document Number: 91240
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS