BSS192,135 NXP Semiconductors, BSS192,135 Datasheet - Page 6
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BSS192,135
Manufacturer Part Number
BSS192,135
Description
MOSFET P-CH 240V 200MA SOT-89
Manufacturer
NXP Semiconductors
Datasheet
1.BSS192135.pdf
(12 pages)
Specifications of BSS192,135
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
240V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
2.8V @ 1mA
Input Capacitance (ciss) @ Vds
90pF @ 25V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
933943950135
BSS192 /T3
BSS192 /T3
BSS192 /T3
BSS192 /T3
Philips Semiconductors
2002 May 22
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
I
Fig.10 Temperature coefficient of drain-source
k
D
= 200 mA; V
=
2.5
k
1.5
0.5
---------------------------------------- -
R
2
1
0
DSon
R
50
DSon
on-state resistance; typical values.
at 25 C
at T
GS
j
= 10 V.
0
50
100
T j (
MDA181
o
C)
150
6
Product specification
BSS192